High-Breakdown-Voltage Submicron InGaAs/InP Double Heterojunction Bipolar Transistor with ft=170GHz and fmax=253GHz
JIN Zhi1, SU Yong-Bo1, CHENG Wei1, LIU Xin-Yu1, XU An-Hai2, QI Ming2
1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 1000292State Key Lab of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences,Shanghai 200050
High-Breakdown-Voltage Submicron InGaAs/InP Double Heterojunction Bipolar Transistor with ft=170GHz and fmax=253GHz
JIN Zhi1, SU Yong-Bo1, CHENG Wei1, LIU Xin-Yu1, XU An-Hai2, QI Ming2
1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 1000292State Key Lab of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences,Shanghai 200050
摘要The layer structure of InGaAs/InP double heterojunction bipolar transistor (DHBT) is designed to enhance the frequency performance and breakdown voltage. The composition-graded base structure is used to decrease the base transit time. The InGaAs setback layer and two highly doped InGaAsP layers are used to eliminate the conduction band spike of the collector. The submicron-emitter InGaAs/InP DHBT is fabricated successfully. The base contact resistance is greatly decreased by optimization of contact metals. The breakdown voltage is more than 6V. The current gain cutoff frequency is as high as 170GHz and the maximum oscillation frequency reached 253GHz. The DHBT with such high performances can be used to make W-band power amplifier.
Abstract:The layer structure of InGaAs/InP double heterojunction bipolar transistor (DHBT) is designed to enhance the frequency performance and breakdown voltage. The composition-graded base structure is used to decrease the base transit time. The InGaAs setback layer and two highly doped InGaAsP layers are used to eliminate the conduction band spike of the collector. The submicron-emitter InGaAs/InP DHBT is fabricated successfully. The base contact resistance is greatly decreased by optimization of contact metals. The breakdown voltage is more than 6V. The current gain cutoff frequency is as high as 170GHz and the maximum oscillation frequency reached 253GHz. The DHBT with such high performances can be used to make W-band power amplifier.
[1] Hafez W, Snodgrass W, Feng M 2005 Appl. Phys.Lett. 87 252109 [2] Lee Q, Martin S C, Mensa D, Smith R P, Guthrie J and Rodwell M J W1999 IEEE Electron Device Lett. 20 396 [3] Morf T, Hubscher S, Huber D, Huber A, Schwarz V and Jackel H 1999 IEEE Microwave Guided Wave Lett. 9 523 [4] Wei Y, Urteaga M, Griffith Z, Scott D, Xie S, Paidi V,Parthasarathy N and Rodwell M J W 2003 IEEE Radio FrequencyIntegrated Circuits Symposium (Philadelphia 8--13 June 2003) p919 [5] Paidi V K, Griffith Z, Wei Y, Dahlstrom M, Urteaga M,Parthasarathy N, Seo M, Samoska L, Fung A and Rodwell M J W 2005 IEEE Trans. Microwave Theory Techn. 53 598 [6] Dahlstrom M 2003 PhD thesis (University ofCalifornia, Santa Barbara, USA) [7] Ida M, Kurishima K and Wtanabe N 2002 IEEE Electron. DeviceLett. 23 694 [8] Jin Z, Prost W, Neumann S and Tegude F J 2004 Appl. Phys.Lett. 84 2910 [9] Liu Willam 1998 Handbook of III--V Heterojunction BipolarTransistors (New York: Wiley) p 722 [10] Jin Z and Liu X Y 2008 Sci. Chin. E (accepted)