2008, Vol. 25(7): 2686-2689 DOI: | ||
High-Breakdown-Voltage Submicron InGaAs/InP Double Heterojunction Bipolar Transistor with ft=170GHz and fmax=253GHz | ||
JIN Zhi1, SU Yong-Bo1, CHENG Wei1, LIU Xin-Yu1, XU An-Hai2, QI Ming2 | ||
1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 1000292State Key Lab of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences,Shanghai 200050 | ||
收稿日期 2008-03-17 修回日期 1900-01-01 | ||
Supporting info | ||
[1] Hafez W, Snodgrass W, Feng M 2005 Appl. Phys. [2] Lee Q, Martin S C, Mensa D, Smith R P, Guthrie J and Rodwell M J W [3] Morf T, Hubscher S, Huber D, Huber A, Schwarz V and Jackel H 1999 [4] Wei Y, Urteaga M, Griffith Z, Scott D, Xie S, Paidi V, [5] Paidi V K, Griffith Z, Wei Y, Dahlstrom M, Urteaga M, [6] Dahlstrom M 2003 PhD thesis (University of [7] Ida M, Kurishima K and Wtanabe N 2002 IEEE Electron. Device [8] Jin Z, Prost W, Neumann S and Tegude F J 2004 Appl. Phys. [9] Liu Willam 1998 Handbook of III--V Heterojunction Bipolar [10] Jin Z and Liu X Y 2008 Sci. Chin. E (accepted) |
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