2008, Vol. 25(7): 2686-2689    DOI:
High-Breakdown-Voltage Submicron InGaAs/InP Double Heterojunction Bipolar Transistor with ft=170GHz and fmax=253GHz
JIN Zhi1, SU Yong-Bo1, CHENG Wei1, LIU Xin-Yu1, XU An-Hai2, QI Ming2
1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 1000292State Key Lab of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences,Shanghai 200050
收稿日期 2008-03-17  修回日期 1900-01-01
Supporting info

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[10] Jin Z and Liu X Y 2008 Sci. Chin. E (accepted)