Significant Improvement of Organic Thin-Film Transistor Mobility Utilizing an Organic Heterojunction Buffer Layer
PAN Feng1,2, QIAN Xian-Rui1,2, HUANG Li-Zhen1,2, WANG Hai-Bo1, YAN Dong-Hang1**
1 State Key Laboratory of Polymer Chemistry and Physics, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 2 Graduate School of Chinese Academy of Sciences, Beijing 100039
Significant Improvement of Organic Thin-Film Transistor Mobility Utilizing an Organic Heterojunction Buffer Layer
PAN Feng1,2, QIAN Xian-Rui1,2, HUANG Li-Zhen1,2, WANG Hai-Bo1, YAN Dong-Hang1**
1 State Key Laboratory of Polymer Chemistry and Physics, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 2 Graduate School of Chinese Academy of Sciences, Beijing 100039
摘要High-mobility vanadyl phthalocyanine (VOPc)/5,5"'−bis(4-fluorophenyl)-2,2':5',2":5",2"'−quaterthiophene (F2-P4T) thin-film transistors are demonstrated by employing a copper hexadecafluorophthalocyanine (F16CuPc)/copper phthalocyanine (CuPc) heterojunction unit, which are fabricated at different substrate temperatures, as a buffer layer. The highest mobility of 4.08 cm2/Vs is achieved using a F16CuPc/CuPc organic heterojunction buffer layer fabricated at high substrate temperature. Compared with the random small grain-like morphology of the room-temperature buffer layer, the high-temperature organic heterojunction presents a large-sized fiber-like film morphology, resulting in an enhanced conductivity. Thus the contact resistance of the transistor is significantly reduced and an obvious improvement in device mobility is obtained.
Abstract：High-mobility vanadyl phthalocyanine (VOPc)/5,5"'−bis(4-fluorophenyl)-2,2':5',2":5",2"'−quaterthiophene (F2-P4T) thin-film transistors are demonstrated by employing a copper hexadecafluorophthalocyanine (F16CuPc)/copper phthalocyanine (CuPc) heterojunction unit, which are fabricated at different substrate temperatures, as a buffer layer. The highest mobility of 4.08 cm2/Vs is achieved using a F16CuPc/CuPc organic heterojunction buffer layer fabricated at high substrate temperature. Compared with the random small grain-like morphology of the room-temperature buffer layer, the high-temperature organic heterojunction presents a large-sized fiber-like film morphology, resulting in an enhanced conductivity. Thus the contact resistance of the transistor is significantly reduced and an obvious improvement in device mobility is obtained.
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2011, Vol. 28 
