摘要Second-exciting surface-polasmon-polariton (SPP) interference lithography (SE-SPPIL) designed by an improving attenuated total reflection (ATR) mode is suggested for fabricating metal nanograting. A metal film coated under a prism excites SPP first, and then the SPP energy transmits into another metal film and launches SPP again. An interlayer between two metal films is a thin resist coated on the second metal film. An interference nanopattern is formed in the resist when two SPP waves are launched symmetrically. After development, chemical or physical etching, the nanopattern is transferred into the metal film. A random thickness metal grating can be achieved as the thickness of the second metal film does not influence the interference pattern intensity. This scheme is promising for fabricating metal nanograting at low cost.
Abstract：Second-exciting surface-polasmon-polariton (SPP) interference lithography (SE-SPPIL) designed by an improving attenuated total reflection (ATR) mode is suggested for fabricating metal nanograting. A metal film coated under a prism excites SPP first, and then the SPP energy transmits into another metal film and launches SPP again. An interlayer between two metal films is a thin resist coated on the second metal film. An interference nanopattern is formed in the resist when two SPP waves are launched symmetrically. After development, chemical or physical etching, the nanopattern is transferred into the metal film. A random thickness metal grating can be achieved as the thickness of the second metal film does not influence the interference pattern intensity. This scheme is promising for fabricating metal nanograting at low cost.
LIANG Hui-Min**;WANG Jing-Quan
. Simulation of Interference Nanolithography of Second-Exciting Surface-Plasmon Polartions for Metal Nanograting Fabrication[J]. 中国物理快报, 2011, 28(1): 18101-018101.
LIANG Hui-Min**, WANG Jing-Quan
. Simulation of Interference Nanolithography of Second-Exciting Surface-Plasmon Polartions for Metal Nanograting Fabrication. Chin. Phys. Lett., 2011, 28(1): 18101-018101.
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