中国物理快报  2011, Vol. 28 Issue (1): 18401-018401    DOI: 10.1088/0256-307X/28/1/018401
  CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 本期目录 | 过刊浏览 | 高级检索 |
Computational Investigation of InxGa1−xN/InN Quantum-Dot Intermediate-Band Solar Cell
DENG Qing-Wen1**, WANG Xiao-Liang1,2,3, YANG Cui-Bai1,2, XIAO Hong-Ling1,2, WANG Cui-Mei1,2, YIN Hai-Bo1,2, HOU Qi-Feng1, BI Yang1, LI Jin-Min1,3, WANG Zhan-Guo2, HOU Xun3
1Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
2Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
3ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, PO Box 912, Beijing 100083
Computational Investigation of InxGa1−xN/InN Quantum-Dot Intermediate-Band Solar Cell
DENG Qing-Wen1**, WANG Xiao-Liang1,2,3, YANG Cui-Bai1,2, XIAO Hong-Ling1,2, WANG Cui-Mei1,2, YIN Hai-Bo1,2, HOU Qi-Feng1, BI Yang1, LI Jin-Min1,3, WANG Zhan-Guo2, HOU Xun3
1Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
2Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
3ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, PO Box 912, Beijing 100083