Photoluminescence Analysis of Electron Damage for Minority Carrier Diffusion Length in GaInP/GaAs/Ge Triple-Junction Solar Cells
Rui Wu, Jun-Ling Wang, Gang Yan, Rong Wang**
Key Laboratory of Beam Technology and Materials Modification (Ministry of Education), College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875
Abstract：Photoluminescence (PL) measurements are carried out to investigate the degradation of GaInP top cell and GaAs middle cell for GaInP/GaAs/Ge triple-junction solar cells irradiated with 1.0, 1.8 and 11.5 MeV electrons with fluences ranging up to $3\times10^{15}$, $1\times10^{15}$ and $3\times10^{14}$ cm$^{-2}$, respectively. The degradation rates of PL intensity increase with the electron fluence and energy. Furthermore, the damage coefficient of minority carrier diffusion length is estimated by the PL radiative efficiency. The damage coefficient increases with the electron energy. The relation of damage coefficient to electron energy is discussed with the non-ionizing energy loss (NIEL), which shows a quadratic dependence between damage coefficient and NIEL.
. [J]. 中国物理快报, 2018, 35(4): 46101-.
Rui Wu, Jun-Ling Wang, Gang Yan, Rong Wang. Photoluminescence Analysis of Electron Damage for Minority Carrier Diffusion Length in GaInP/GaAs/Ge Triple-Junction Solar Cells. Chin. Phys. Lett., 2018, 35(4): 46101-.
2018, Vol. 35 
