Radiation Damage Analysis of Individual Subcells for GaInP/GaAs/Ge Solar Cells Using Photoluminescence Measurements
Yong Zheng1,2, Tian-Cheng Yi1,2, Jun-Ling Wang1,2, Peng-Fei Xiao1,2, Rong Wang1,2**
1Key Laboratory of Beam Technology and Materials Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875 2Beijing Radiation Center, Beijing 100875
Abstract：The radiation damage of three individual subcells for GaInP/GaAs/Ge triple-junction solar cells irradiated with electrons and protons is investigated using photoluminescence (PL) measurements. The PL spectra of each subcell are obtained using different excitation lasers. The PL intensity has a fast degradation after irradiation, and decreases as the displacement damage dose increases. Furthermore, the normalized PL intensity varying with the displacement damage dose is analyzed in detail, and then the lifetime damage coefficients of the recombination centers for GaInP top-cell, GaAs mid-cell and Ge bottom-cell of the triple-junction solar cells are determined from the PL radiative efficiency.
2017, Vol. 34 
