Growth of Single-Crystalline Silicon Nanocone Arrays by Plasma Sputtering Reaction Deposition
Zhi-Cheng Wu, Lei-Lei Guan, Hui Li, Jia-Da Wu, Jian Sun, Ning Xu** ,
Department of Optical Science and Engineering, Fudan University, Shanghai 200433
Abstract ：Vertically aligned single-crystalline silicon nanocone (Si-NC) arrays are grown on nickel-coated silicon (100) substrates by a novel method i.e., abnormal glow-discharge plasma sputtering reaction deposition. The experimental results show that the inlet CH$_{4}$/(N$_{2}$+H$_{2}$) ratio has great effects on the morphology of the grown Si-NC arrays. The characterization of the morphology, crystalline structure and composition of the grown Si-NCs indicates that the Si-NCs are grown epitaxially in the vapor–liquid–solid mode. The analyses of optical emission spectra further reveal that the inlet methane can promote the growth of Si-NCs by raising the plasma temperature and enhancing the ion-sputtering. The understanding of the growth mechanism of the Si-NC arrays will be helpful for fabrication of required Si-NC arrays.
收稿日期: 2016-10-27
出版日期: 2017-01-25
:
52.80.Tn
(Other gas discharges)
81.15.Cd
(Deposition by sputtering)
82.33.Xj
(Plasma reactions (including flowing afterglow and electric discharges))
引用本文:
. [J]. 中国物理快报, 2017, 34(2): 25202-025202.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/34/2/025202
或
https://cpl.iphy.ac.cn/CN/Y2017/V34/I2/25202
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2017, Vol. 34 
