Absorption Enhancement of Silicon Solar Cell in a Positive-Intrinsic-Negative Junction
Gen Yue1,2, Zhen Deng1, Sen Wang1,2, Ran Xu1,2, Xinxin Li1,2, Ziguang Ma1, Chunhua Du1, Lu Wang1, Yang Jiang1, Haiqiang Jia1, Wenxin Wang1, Hong Chen1,2,3**
1Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 2Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049 3Songshan Lake Materials Laboratory, Dongguan 523808
Abstract：Absorption coefficient is a physical parameter to describe electromagnetic energy absorption of materials, which is closely related to solar cells and photodetectors. We grow a series of positive-intrinsic-negative (PIN) structures on silicon wafer by a gas source molecule beam epitaxy system and the investigate the absorption coefficient through the photovoltaic processes in detail. It is found that the absorption coefficient is enhanced by one order and can be tuned greatly through the thickness of the intrinsic layer in the PIN structure, which is also demonstrated by the 730-nm-wavelength laser irradiation. These results cannot be explained by the traditional absorption theory. We speculate that there could be some uncovered mechanism in this system, which will inspire us to understand the absorption process further.
. [J]. 中国物理快报, 2019, 36(5): 57201-.
Gen Yue, Zhen Deng, Sen Wang, Ran Xu, Xinxin Li, Ziguang Ma, Chunhua Du, Lu Wang, Yang Jiang, Haiqiang Jia, Wenxin Wang, Hong Chen. Absorption Enhancement of Silicon Solar Cell in a Positive-Intrinsic-Negative Junction. Chin. Phys. Lett., 2019, 36(5): 57201-.
2019, Vol. 36 
