Self-Trapped Exciton Photoluminescence from Polycrystalline K2AgI3 Obtained by Solid-State Reaction Method
DAI Peng1,2, XU Zou-Ming1, WANG Yu-Xia1**
1Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026 2School of Physics and Material Science, Anhui University, Hefei 230039
Self-Trapped Exciton Photoluminescence from Polycrystalline K2AgI3 Obtained by Solid-State Reaction Method
DAI Peng1,2, XU Zou-Ming1, WANG Yu-Xia1**
1Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026 2School of Physics and Material Science, Anhui University, Hefei 230039
摘要Polycrystalline K2AgI3 is synthesized by solid-state reaction at 403 K using AgI and KI as starting materials. X-ray diffraction, photoluminescence (PL) spectra, photoluminescence excitation (PLE) spectra, electron paramagnetic resonance (EPR) and absorption spectra are employed to investigate the structure and photo-physical properties of such material. A broad luminescence band centered at about 608 nm at 180 K with large Stokes shift is found. When the temperature rises to about 300 K, an obvious PL blue-shift, PL intensity weakening, and an emission band broadening are observed. It is suggested that the emission at about 608 nm may originate from the recombination of self-trapped excitons.
Abstract:Polycrystalline K2AgI3 is synthesized by solid-state reaction at 403 K using AgI and KI as starting materials. X-ray diffraction, photoluminescence (PL) spectra, photoluminescence excitation (PLE) spectra, electron paramagnetic resonance (EPR) and absorption spectra are employed to investigate the structure and photo-physical properties of such material. A broad luminescence band centered at about 608 nm at 180 K with large Stokes shift is found. When the temperature rises to about 300 K, an obvious PL blue-shift, PL intensity weakening, and an emission band broadening are observed. It is suggested that the emission at about 608 nm may originate from the recombination of self-trapped excitons.
[1] Miloslavsky V K, Yunakova O N and Sun J L 1995 International Conference on Optical Diagnostics of Materials and Devices for Optoelectronics, Microelectronics and Quantum Electronics (Kiev, Ukraine 11–13 May 1995) p 156
[2] Kawai T, Akai I, Ichida H, Kanematsu Y, Mizoguchi K and Karasawa T 2009 Phys. Status Solidi B 246 1327
[3] Hazeen N, Ali K S S, Rani M P and Saravanan R 2008 Defect and Diffusion Forum 278 33
[4] Owens B B and Argue G R 1967 Science 157 (3786) 308
[5] Hull S, Keen D A, Sivia D S and Berastegui P 2002 J. Solid State Chem. 165 363
[6] Edamatsu K, Ikezawa M, Sato K, Kona S and Sagawa T 1983 J. Phys. Soc. Jpn. 52 1521
[7] Thackeray M M and Coetzer J 1975 Acta Cryst. B31 2339
[8] Iwai S, Nakamura A, Tanimura K and Itoh N 1995 Solid State Commun. 96 803
[9] Miloslavsky V K, Yunakova O N and Kovalenko E N 2007 Low Temp. Phys. 33 864
[10] Edamatsu K, Ikezawa M, Tokailin H, Takahashi T and Sagawa T 1986 J. Phys. Soc. Jpn. 55 2880
[11] Awano T, Nanba T, Ikezawa M, Matsuyama T and Yamaoka H 1989 J. Phys. Soc. Jpn. 58 2570
[12] Mohan D B and Sunandana C S 2006 J. Phys. Chem . B 110 4569
[13] Mochizuki S and Ohta Y 1999 International Conference on Luminescence and Optical Spectroscopy of Condensed Matter (Osaka, Japan 23–27 August 1999) p 299
[14] He H P, Wang Y X and Chen H W 2003 14th International Conference on Solid State Ionics (Monterey, American 22–27 June 2003) p 651
[15] Leonelli R and Brebner J L 1986 Phys. Rev . B 33 8649
[16] Aguilar M, Gonzalo C and Godefroy G 1979 Solid State Commun. 30 525
[17] Hosaka N, Sekiya T and Kurita S 1996 International Conference on luminescence and Optical Spectroscopy of Condensed Matter (Prague, Czech 18–23 August 1996) p 874
[18] Zhang W F, Yin Z and Zhang M S 2000 Appl. Phys . A 70 93
[19] Kabler M N 1964 Phys. Rev . A 136 l296
[20] Ueta M, Kanzaki H, Kobayashi K, Toyozawa Y and Hanamura E 1986 Excitonic Processes in Solids (Berlin: Springer) chap 4 p 245
[21] Zhang W F, Tang J W and Ye J H 2006 Chem. Phys. Lett. 418 174