Selective Area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal Organic Chemical Vapor Deposition
Peng Ren1,3, Gang Han2, Bing-Lei Fu1,3, Bin Xue1,3,4, Ning Zhang1,3,4, Zhe Liu1,3,4**, Li-Xia Zhao1,3,4, Jun-Xi Wang1,3,4**, Jin-Min Li1,3,4
1Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083 2Schools of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 3State Key Laboratory of Solid State Lighting, Chinese Academy of Sciences, Beijing 100083 4Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Chinese Academy of Sciences, Beijing 100083
Abstract：GaN nanorods are successfully fabricated by adjusting the flow rate ratio of hydrogen (H$_{2}$)/nitrogen (N$_{2}$) and growth temperature of the selective area growth (SAG) method with metal organic chemical vapor deposition (MOCVD). The SAG template is obtained by nanospherical-lens photolithography. It is found that increasing the flow rate of H$_{2}$ will change the GaN crystal shape from pyramid to vertical rod, while increasing the growth temperature will reduce the diameters of GaN rods to nanometer scale. Finally the GaN nanorods with smooth lateral surface and relatively good quality are obtained under the condition that the H$_{2}$:N$_{2}$ ratio is 1:1 and the growth temperature is 1030$^{\circ}\!$C. The good crystal quality and orientation of GaN nanorods are confirmed by high resolution transmission electron microscopy. The cathodoluminescence spectrum suggests that the crystal and optical quality is also improved with increasing the temperature.
. [J]. 中国物理快报, 2016, 33(06): 68101-068101.
Peng Ren, Gang Han, Bing-Lei Fu, Bin Xue, Ning Zhang, Zhe Liu, Li-Xia Zhao, Jun-Xi Wang, Jin-Min Li. Selective Area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal Organic Chemical Vapor Deposition. Chin. Phys. Lett., 2016, 33(06): 68101-068101.
2016, Vol. 33 
