中国物理快报  2016, Vol. 33 Issue (06): 68101-068101    DOI: 10.1088/0256-307X/33/6/068101
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Selective Area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal Organic Chemical Vapor Deposition
Peng Ren1,3, Gang Han2, Bing-Lei Fu1,3, Bin Xue1,3,4, Ning Zhang1,3,4, Zhe Liu1,3,4**, Li-Xia Zhao1,3,4, Jun-Xi Wang1,3,4**, Jin-Min Li1,3,4
1Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083
2Schools of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083
3State Key Laboratory of Solid State Lighting, Chinese Academy of Sciences, Beijing 100083
4Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Chinese Academy of Sciences, Beijing 100083