摘要La0.8Sr0.2AlO3 (LSAO) thin films are grown on SrTiO3 (STO) and MgO substrates by laser molecular beam epitaxy. The LSAO thin film on oxygen deficient STO substrate exhibits metallic behaviour over the temperature range of 80--340K. The optical transmittance spectrum indicates that the LSAO thin films on MgO substrate are insulating at room temperature. The transport properties of LSAO thin films on STO substrates deposited in different oxygen pressure are compared. Our results indicate that oxygen vacancies in STO substrates should be mainly responsible for the transport behaviour of LSAO thin films.
Abstract:La0.8Sr0.2AlO3 (LSAO) thin films are grown on SrTiO3 (STO) and MgO substrates by laser molecular beam epitaxy. The LSAO thin film on oxygen deficient STO substrate exhibits metallic behaviour over the temperature range of 80--340K. The optical transmittance spectrum indicates that the LSAO thin films on MgO substrate are insulating at room temperature. The transport properties of LSAO thin films on STO substrates deposited in different oxygen pressure are compared. Our results indicate that oxygen vacancies in STO substrates should be mainly responsible for the transport behaviour of LSAO thin films.
QIU Jie;LU Hui-Bin;JIN Kui-Juan;LIU Guo-Zhen;YANG Guo-Zhen. Transport Behaviour of La0.8Sr0.2AlO3 Thin Film on Oxygen Deficient SrTiO3 Substrate[J]. 中国物理快报, 2008, 25(6): 2206-2208.
QIU Jie, LU Hui-Bin, JIN Kui-Juan, LIU Guo-Zhen, YANG Guo-Zhen. Transport Behaviour of La0.8Sr0.2AlO3 Thin Film on Oxygen Deficient SrTiO3 Substrate. Chin. Phys. Lett., 2008, 25(6): 2206-2208.
[1] Richard J H, Simon A T R and Ekhard K H S 2004 Phys.Rev. B 69 144101 [2] Shimada T, Kakimoto K I and Ohsato H 2005 J. Eur.Ceram. Soc. 25 2901 [3] Kazzi M E, Merckling C, Delhaye G, Arzel L, Grene G,Bergignat E and Hollinger G 2006 Mater. Sci. Semicond. Process 9 954 [4] Xiang W F, Liu Y Z, Lu H B, Yan L, He M and Chen Z H 2006 Thin Solid Films 515 2722 [5] Park B E and Ishiwara H 2003 Appl. Phys. Lett. 82 1197 [6] Simon R W, Platt C E, Lee A E, Lee G S, Dally K P, Wire MS and Luine J A 1988 Appl. Phys. Lett. 53 2677 [7] Zylberberg J and Ye Z G 2006 J. Appl Phys. 100086102 [8] Fu Q X, Tietz F, Lersch P and St\"{over D 2006 SolidState Ion. 177 1059 [9] Nakagawa N, Hwang H Y and Muller D A 2006 Nat.Mater. 5 204 [10] Huijben M, Rijnders G, Blank D H A, Bals S, Van Aert S,Verbeeck J, Tendeloo G V, Brinkman A and Hilgenkamp H 2006 Nat.Mater. 5 556 [11] Thiel S, Hammerl G, Schmehl A, Schneider C W and MannhartJ 2006 Science 313 1942 [12] Ohtomo A and Hwang H Y 2004 Nature 427 423 [13] Kalabukhov A, Gunnarsson R, B\"{orjesson J, Olsson E,Claeson T and Winkler D 2007 Phys. Rev. B 75 121404(R) [14] Henrich V E, Dresselhaus G and Zeiger H J 1978 Phys.Rev. B 17 4908 [15] Muller D A, Nakagawa N, Ohtomo A, Grazul J L and Hwang HY 2004 Nature 430 657 [16] Frederikse H P R, Thurber W R and Hosler W R 1964 Phys. Rev. A 134 442 [17] Gandy H W 1959 Phys. Rev. 133 795 [18] Mukunoki Y, Nakagawa N, Susaki T and Hwanga H Y 2005 Appl. Phys. Lett. 86 171908 [19] Lim S G, Kriventsov S, Jackson T N, Haeni J H, Schlom DG, Balbashov A M, Uecker R, Reiche P, Freeouf J L and Lucovsky G2002 J. Appl. Phys. 91 4500 [20] Jin K J, Zhao K, Lu H B, Liao L and Yang G Z 2007 Appl. Phys. Lett. 91 081906 Han P, Jin K J, Lu H B, Zhou Q L, Zhou Y L and Yang G Z 2007 Appl. Phys. Lett. 91 182102 [21] Sun J R, Shen B G, Tian H F, Li J Q and Weng Y X 2005 Appl. Phys. Lett. 87 202502 Qiu J, Jin K J, Han P, Lu H B, Hu C L, Wang B P and Yang G Z2007 Europhys. Lett. 79 57004