摘要Oxide p-n junctions of p-SrIn0.1Ti0.9O3/n-SrNb0.01Ti0.99O3 (SITO/SNTO) are fabricated by laser molecular beam epitaxy. The current-voltage characteristics of the SITO/SNTO p-n junction are investigated mainly in the temperature range of 300--400K. The SITO/SNTO junction exhibited good rectifying behaviour over the whole temperature range. Our results indicate a possibility of application of oxide p-n junction in higher temperatures in future electronic devices.
Abstract：Oxide p-n junctions of p-SrIn0.1Ti0.9O3/n-SrNb0.01Ti0.99O3 (SITO/SNTO) are fabricated by laser molecular beam epitaxy. The current-voltage characteristics of the SITO/SNTO p-n junction are investigated mainly in the temperature range of 300--400K. The SITO/SNTO junction exhibited good rectifying behaviour over the whole temperature range. Our results indicate a possibility of application of oxide p-n junction in higher temperatures in future electronic devices.
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2008, Vol. 25 
