摘要By using compositionally graded SiGe films as virtual substrates, tensile strained Si films with the strain of 1.5% and the threading dislocation density less than 1.0×105cm-2 are successfully grown in micron size windows by molecular beam epitaxy (MBE). The thickness of the virtual substrates was only 330nm. On the surface of the s-Si films no cross-hatched lines resulting from misfit dislocations could be observed. We attribute these results to the edge-induced strain relaxation of the epitaxial films in windows, and the patterned virtual substrates with compositionally graded SiGe films.
Abstract：By using compositionally graded SiGe films as virtual substrates, tensile strained Si films with the strain of 1.5% and the threading dislocation density less than 1.0×105cm-2 are successfully grown in micron size windows by molecular beam epitaxy (MBE). The thickness of the virtual substrates was only 330nm. On the surface of the s-Si films no cross-hatched lines resulting from misfit dislocations could be observed. We attribute these results to the edge-induced strain relaxation of the epitaxial films in windows, and the patterned virtual substrates with compositionally graded SiGe films.
YANG Hong-Bin;ZHANG Xiang-Jiu. Highly Strained Si Films with Ultra-low Dislocation Density Grown on Virtual Substrates of Thin Thickness[J]. 中国物理快报, 2009, 26(4): 48103-048103.
YANG Hong-Bin, ZHANG Xiang-Jiu. Highly Strained Si Films with Ultra-low Dislocation Density Grown on Virtual Substrates of Thin Thickness. Chin. Phys. Lett., 2009, 26(4): 48103-048103.
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