1Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 2School of Information Science and Technology, ShanghaiTech University, Shanghai 201210 3School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210 4Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083 5Fert Beijing Institute, BDBC, and School of Electronic and Information Engineering, Beihang University, Beijing 100191 6University of Chinese Academy of Sciences, Beijing 100049
Abstract：We report the epitaxial growth of single-crystalline CdTe(100) thin films on GaAs(100) substrates using molecular beam epitaxy. By controlling the substrate pre-heated temperature with adjustable Te flux, three different reconstructed surfaces are realized, and their influence on the subsequent CdTe growth is investigated. More importantly, we find that both the presence of a thin native oxide layer and the formation of Ga-As-Te bonds at the interface enable the growth along the (100) orientation and help to reduce the threading dislocations and other defects. Our results provide new opportunities for compound semiconductor heterogeneous growth via interfacial engineering.
2018, Vol. 35 
