1School of Mathematics and Physics, Jiangsu University of Technology, Changzhou 213001 2State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275 3State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 4Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 5State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050
Abstract：After compositing with SiO$_{2}$ layers, it is shown that superlattice-like Sb/SiO$_{2}$ thin films have higher crystallization temperature ($\sim240^{\circ}\!$C), larger crystallization activation energy (6.22 eV), and better data retention ability (189$^{\circ}\!$C for 10 y). The crystallization of Sb in superlattice-like Sb/SiO$_{2}$thin films is restrained by the multilayer interfaces. The reversible resistance transition can be achieved by an electric pulse as short as 8 ns for the Sb(3 nm)/SiO$_{2}$(7 nm)-based phase change memory cell. A lower operation power consumption of 0.09 mW and a good endurance of $3.0\times10^{6}$ cycles are achieved. In addition, the superlattice-like Sb(3 nm)/SiO$_{2}$(7 nm) thin film shows a low thermal conductivity of 0.13 W/(m$\cdot$K).
Podpirka A, Lee W K, Ziegler J I, Brintlinger T H, Felts J R, Simpkins B S, Bassim N D, Laracuente A R, Sheehan P E and Ruppalt L B 2017 Nanoscale9 8815
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Guo T Q, Song S N, Li L, Ji X L, Li C, Xu C, Shen L L, Xue Y, Liu B, Song Z T, Qi M and Feng S L 2017 Scr. Mater.129 56
2018, Vol. 35 
