Charge Density Wave States in 2H-MoTe$_{2}$ Revealed by Scanning Tunneling Microscopy
Lu Dong1 , Guan-Yong Wang1 , Zhen Zhu1 , Chen-Xiao Zhao1 , Xin-Yi Yang1 , Ai-Min Li1 , Jing-Lei Chen2 , Dan-Dan Guan1,3 , Yao-Yi Li1,3 , Hao Zheng1,3 , Mao-Hai Xie2 , Jin-Feng Jia1,3**
1 Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 2002402 Physics Department, The University of Hong Kong, Pokfulam Road, Hong Kong3 Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093
Abstract ：2H- and 1T$'$-phase monolayer MoTe$_{2}$ films on highly oriented pyrolytic graphite are studied using scanning tunneling microscopy and spectroscopy (STM/STS). The phase transition of MoTe$_{2}$ can be controlled by a post-growth annealing process, and the intermediate state during the phase transition is directly observed by STM. For 2H-MoTe$_{2}$, inversion domain boundaries are presented as bright lines at high sample bias, but as dark lines at lower sample bias. The $dI/dV$ mappings reveal the distinct distributions of electronic states between domain boundaries and interiors of domains. It should be noted that a $2\times2$ periodic structure is clearly discernable inside the domains, where the STS measurement shows a small dip of size $\sim$150 meV at the vicinity of the Fermi level, indicating that the $2\times2$ periodic structure may be an incommensurate charge density wave. Moreover, a $4\times4$ periodic structure appears in 2H-MoTe$_{2}$ grown at a higher substrate temperature.
收稿日期: 2018-02-12
出版日期: 2018-05-19
:
68.37.Ef
(Scanning tunneling microscopy (including chemistry induced with STM))
68.55.-a
(Thin film structure and morphology)
73.20.-r
(Electron states at surfaces and interfaces)
68.47.Fg
(Semiconductor surfaces)
引用本文:
. [J]. 中国物理快报, 2018, 35(6): 66801-.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/35/6/066801
或
https://cpl.iphy.ac.cn/CN/Y2018/V35/I6/66801
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2018, Vol. 35 
