Honeycomb Lattice in Metal-Rich Chalcogenide Fe$_{2}$Te
Jia-Qi Guan1, Li Wang2, Pengdong Wang2, Wei Ren2, Shuai Lu2, Rong Huang2, Fangsen Li2*, Can-Li Song1,3*, Xu-Cun Ma1,3, and Qi-Kun Xue1,3,4,5
1State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China 2Vacuum Interconnected Nanotech Workstation (Nano-X), Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China 3Frontier Science Center for Quantum Information, Beijing 100084, China 4Beijing Academy of Quantum Information Sciences, Beijing 100193, China 5Southern University of Science and Technology, Shenzhen 518055, China
Abstract：Two-dimensional honeycomb crystals have inspired intense research interest for their novel properties and great potential in electronics and optoelectronics. Here, through molecular beam epitaxy on SrTiO$_{3}$(001), we report successful epitaxial growth of metal-rich chalcogenide Fe$_{2}$Te, a honeycomb-structured film that has no direct bulk analogue, under Te-limited growth conditions. The structural morphology and electronic properties of Fe$_{2}$Te are explored with scanning tunneling microscopy and angle resolved photoemission spectroscopy, which reveal electronic bands cross the Fermi level and nearly flat bands. Moreover, we find a weak interfacial interaction between Fe$_{2}$Te and the underlying substrates, paving a newly developed alternative avenue for honeycomb-based electronic devices.
2021, Vol. 38 
