Van der Waals Epitaxy of Anatase TiO$_{2}$ on mica and Its Application as Buffer Layer
Han Xu1, Zhen-Lin Luo1**, Chang-Gan Zeng1, Chen Gao1,2**
1National Synchrotron Radiation Laboratory & CAS Key Laboratory of Materials for Energy Conversion, Department of Physics, University of Science and Technology of China, Hefei 230026 2Beijing Advanced Sciences and Innovation Center of Chinese Academy of Sciences, Beijing 101407
Abstract：MICAtronics, based on the functional oxide/mica heterostructures, has recently attracted much attention due to its potential applications in transparent, flexible electronics and devices. However, the weak van der Waals interaction decreases the tolerable lattice mismatch and thus limits the species of function oxides that are able to be epitaxially grown on mica. We successfully fabricate relatively high-quality epitaxial anatase TiO$_{2}$ thin films on mica substrates. Structural analyses reveal that the carefully chosen growth temperature (650$^\circ\!$C) and suitable crystalline phase (anatase phase) of TiO$_{2}$ are the key issues for this van der Waals epitaxy. Moreover, as a buffer layer, the TiO$_{2}$ layer successfully suppresses the decomposition of BiFeO$_{3}$ and the difficulty of epitaxial growth of BiFeO$_{3}$ is decreased. Therefore, relatively high-quality anatase TiO$_{2}$ is proved to be an effective buffer layer for fabricating more functional oxides on mica.
. [J]. 中国物理快报, 2019, 36(7): 78101-.
Han Xu, Zhen-Lin Luo, Chang-Gan Zeng, Chen Gao. Van der Waals Epitaxy of Anatase TiO$_{2}$ on mica and Its Application as Buffer Layer. Chin. Phys. Lett., 2019, 36(7): 78101-.
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2019, Vol. 36 
