Tunable Perpendicular Magnetic Anisotropy in Off-Stoichiometric Full-Heusler Alloy Co$_{2}$MnAl
Zhi-Feng Yu1,2 , Jun Lu1,2 , Hai-Long Wang1,2 , Xu-Peng Zhao1,2 , Da-Hai Wei1,2 , Jia-Lin Ma1,2 , Si-Wei Mao1,2 , Jian-Hua Zhao1,2,3**
1 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 1000832 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 1001903 Beijing Academy of Quantum Information Sciences, Beijing 100193
Abstract ：Off-stoichiometric full-Heusler alloy Co$_{2}$MnAl thin films with different thicknesses are epitaxially grown on GaAs (001) substrates by molecular-beam epitaxy. The composition of the films, close to Co$_{1.65}$Mn$_{1.35}$Al (CMA), is determined by x-ray photoelectron spectroscopy and energy dispersive spectroscopy. Tunable perpendicular magnetic anisotropy (PMA) from 3.41 Merg/cm$^{3}$ to 1.88 Merg/cm$^{3}$ with the thickness increasing from 10 nm to 30 nm is found, attributed to the relaxation of residual compressive strain. Moreover, comparing with the ultrathin CoFeB/MgO used in the conventional perpendicular magnetic tunnel junction, the CMA electrode has a higher magnetic thermal stability with more volume involved. The PMA in CMA films is sustainable up to 300$^{\circ}\!$C, compatible with semiconductor techniques. This work provides a possibility for the development of perpendicular magnetized full-Heusler compounds with high thermal stability and spin polarization.
收稿日期: 2019-03-04
出版日期: 2019-05-18
:
75.50.Cc
(Other ferromagnetic metals and alloys)
75.30.Gw
(Magnetic anisotropy)
81.15.Hi
(Molecular, atomic, ion, and chemical beam epitaxy)
引用本文:
. [J]. 中国物理快报, 2019, 36(6): 67502-.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/36/6/067502
或
https://cpl.iphy.ac.cn/CN/Y2019/V36/I6/67502
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2019, Vol. 36 
