Zirconium Aided Epitaxial Growth of In$_{x}$Se$_{y}$ on InP(111) Substrates
Cheng Zheng1 , Dapeng Zhao1,2 , Xinqiang Cai1 , Wantong Huang1 , Fanqi Meng3 , Qinghua Zhang3 , Lin Tang1 , Xiaopeng Hu1 , Lin Gu3 , Shuai-Hua Ji1,4* , Xi Chen1*
1 State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China2 Beijing Academy of Quantum Information Sciences, Beijing 100193, China3 Laboratory for Advanced Materials & Electron Microscopy, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China4 RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan
Abstract ：Layered material indium selenide (In$_{x}$Se$_{y}$) is a promising candidate for building next-generation electronic and photonic devices. We report a zirconium aided MBE growth of this van der Waals material. When co-depositing zirconium and selenium onto an indium phosphide substrate with a substrate temperature of 400℃ at a constant zirconium flux rate of 0.01 ML/min, the polymorphic In$_{x}$Se$_{y}$ layer emerges on top of the insulating ZrSe$_{2}$ layer. Different archetypes, such as InSe, $\alpha$-In$_{2}$Se$_{3}$ and $\beta$-In$_{2}$Se$_{3}$, are found in the In$_{x}$Se$_{y}$ layers. A negative magnetoresistance of 40% at 2 K under 9 T magnetic field is observed. Such an In$_{x}$Se$_{y}$/ZrSe$_{2}$ heterostructure with good lattice-matching may serve as a candidate for device applications.
收稿日期: 2020-06-20
出版日期: 2020-07-02
:
74.70.Xa
(Pnictides and chalcogenides)
81.15.Hi
(Molecular, atomic, ion, and chemical beam epitaxy)
74.78.Fk
(Multilayers, superlattices, heterostructures)
引用本文:
. [J]. 中国物理快报, 2020, 37(8): 87401-087401.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/37/8/087401
或
https://cpl.iphy.ac.cn/CN/Y2020/V37/I8/87401
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2020, Vol. 37 
