1State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049
Abstract：We report on the tunneling anisotropic magnetoresistance in antiferromagnetic perpendicular tunnel junction consisting of $L1_{0}$-MnGa/FeMn/AlO$_{x}$/Pt grown on GaAs (001) substrates by molecular-beam epitaxy. The temperature-dependent perpendicular exchange bias effect reveals an exchange coupling between ferromagnetic $L1_{0}$-MnGa and antiferromagnetic FeMn. The rotation of antiferromagnetic spins in FeMn can be driven by perpendicularly magnetized $L1_{0}$-MnGa due to the exchange-spring effect at the interface and leads to room-temperature tunneling anisotropic magnetoresistance ratio of 0.86%. We also find that the tunneling anisotropic magnetoresistance strongly depends on temperature and angle. These results have broadened the material selection range for high performance antiferromagnetic spintronic devices.
Martí X, Park B G, Wunderlich J, Reichlová H, Kurosaki Y, Yamada M, Yamamoto H, Nishide A, Hayakawa J, Takahashi H and Jungwirth T 2012 Phys. Rev. Lett.108 017201
Park B G, Wunderlich J, Martí X, Holý V, Kurosaki Y, Yamada M, Yamamoto H, Nishide A, Hayakawa J, Takahashi H, Shick A B and Jungwirth T 2011 Nat. Mater.10 347
[12]
Wang K, Sanderink J G M, Bolhuis T, van der Wiel W G and de Jong M P 2015 Sci. Rep.5 15498
[13]
Mangin S, Ravelosona D, Katine J A, Carey M J, Terris B D and Fullerton E E 2006 Nat. Mater.5 210
2018, Vol. 35 
