1Wuhan University School of Physics and Technology, Wuhan University, Wuhan 430072 2Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 3College of Materials Science and Opto-electronic Technology, University of Chinese Academy of Sciences, Beijing 100049 4Songshan Lake Materials Laboratory, Dongguan 523808
Abstract：III–V quantum dot (QD) lasers monolithically grown on CMOS-compatible Si substrates are considered as essential components for integrated silicon photonic circuits. However, epitaxial growth of III–V materials on Si substrates encounters three obstacles: mismatch defects, antiphase boundaries (APBs), and thermal cracks. We study the evolution of the structures on U-shaped trench-patterned Si (001) substrates with various trench orientations by homoepitaxy and the subsequent heteroepitaxial growth of GaAs film. The results show that the formation of (111)-faceted hollow structures on patterned Si (001) substrates with trenches oriented along [110] direction can effectively reduce the defect density and thermal stress in the GaAs/Si epilayers. The (111)-faceted silicon hollow structure can act as a promising platform for the direct growth of III–V materials for silicon based optoelectronic applications.
Wan Y, Li Q, Liu A Y, Gossard A C, Bowers J E, Hu E L and Lau K M 2016 Opt. Lett.41 1664
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Norman J, Kennedy M J, Selvidge J, Li Q, Wan Y, Liu A Y, Callahan P G, Echlin M P, Pollock T M, Lau K M, Gossard A C and Bowers J E 2017 Opt. Express25 3927
2020, Vol. 37 
