Epitaxial Growth and Magnetic Properties of NiMnAs Films on GaAs Substrates
Jia-Lin Ma1,2 , Hai-Long Wang1,2** , Xing-Min Zhang3 , Shuai Yan3 , Wen-Sheng Yan4 , Jian-Hua Zhao1,2,5
1 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 1000832 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 1000493 Shanghai Synchrotron Radiation Facility, Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 2012044 National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 2300295 CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190
Abstract ：Single-phase Ni$_{0.92}$Mn$_{1.08}$As films with strained $C_{\rm 1b}$ symmetry are grown on GaAs (001) substrates. In addition, a preferred epitaxial configuration of (110)-orientated Ni$_{0.92}$Mn$_{1.08}$As on (001)-orientated GaAs is revealed by synchrotron radiation measurement. The magnetic properties of the films are found to be significantly influenced by the growth temperature and the optimized growth temperature is determined to be $\sim$$370^\circ\!$C. According to the results of x-ray absorption spectroscopy, these phenomena can be attributed to the variation of the local electronic structure of the Mn atoms. Our work provides useful information for the further investigations of NiMnAs, which is a theoretically predicted half-metal.
收稿日期: 2018-09-26
出版日期: 2018-12-25
:
75.50.Cc
(Other ferromagnetic metals and alloys)
75.70.Ak
(Magnetic properties of monolayers and thin films)
81.05.Bx
(Metals, semimetals, and alloys)
81.15.Hi
(Molecular, atomic, ion, and chemical beam epitaxy)
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2019, Vol. 36 
