Unusual Anomalous Hall Effect in a Co$_{2}$MnSi/MnGa/Pt Trilayer
Shan Li1,2, Jun Lu1,3*, Lian-Jun Wen1,2, Dong Pan1,2, Hai-Long Wang1,2, Da-Hai Wei1,2,3, and Jian-Hua Zhao1,2,3
1State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 2Center of Materials Science and Optoelectronics Engineering & CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China 3Beijing Academy of Quantum Information Science, Beijing 100193, China
Abstract：An ultra-thin Co$_{2}$MnSi(0.5 nm)/MnGa(1.5 nm) bilayer capped with Pt (5 nm) has been successfully grown by molecular-beam epitaxy. It is a potential candidate of synthetic antiferromagnets due to antiferromagnetic coupling between Co$_{2}$MnSi and MnGa, which is a promising skyrmion-racetrack-memory medium without skyrmion Hall effect after capping with a Pt layer. Unusual humps in transverse Hall resistance loops are clearly observed in the temperature range from 260 to 400 K. This anomaly is generally attributed to topological Hall effect, but other than that, we prove that non-uniform rotation of magnetic moments in the bilayer with magnetic field sweeping is also a possible mechanism contributed to the unusual hump.
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2020, Vol. 37 
