Electrical Characteristics of Co/n-Si Schottky Barrier Diodes Using I-V and C-V Measurements
G. Güler1, Ö. Güllü2, S. Karatas3, Ö. F. Bakkaloglu4
1Department of Physics, Faculty of Education University of Adiyaman, 02100 Adiyaman, Turkey2Department of Physics, Faculty of Sciences and Arts, University of Batman, 72060 Batman, Turkey3Department of Physics, Faculty of Sciences and Arts, University of Kahramanmaras Sütcü .Imam, 46100 Kahramanmaras Turkey4Department of Engineering Physics, Faculty of Engineering Physics, University of Gaziantep, 27310 Gaziantep, Turkey
Electrical Characteristics of Co/n-Si Schottky Barrier Diodes Using I-V and C-V Measurements
G. Güler1, Ö. Güllü2, S. Karatas3, Ö. F. Bakkaloglu4
1Department of Physics, Faculty of Education University of Adiyaman, 02100 Adiyaman, Turkey2Department of Physics, Faculty of Sciences and Arts, University of Batman, 72060 Batman, Turkey3Department of Physics, Faculty of Sciences and Arts, University of Kahramanmaras Sütcü .Imam, 46100 Kahramanmaras Turkey4Department of Engineering Physics, Faculty of Engineering Physics, University of Gaziantep, 27310 Gaziantep, Turkey
摘要Electrical characteristics of Co/n-Si Schottky barrier diodes are analysed by current-voltage (I-V) and capacitance-voltage (C-V) techniques at room temperature. The electronic parameters such as ideality factor, barrier height and average series resistance are determined. The barrier height 0.76eV obtained from the C-V measurements is higher than that of the value 0.70eV obtained from the I-V measurements. The series resistance RS and the ideality factor n are determined from the d\ln(I)/dV plot and are found to be 193.62Ω and 1.34, respectively. The barrier height and the RS value are calculated from the H(I)-I plot and are found to be 0.71eV and 205.95Ω. Furthermore, the energy distribution of the interface state density is determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. The interface state density Nss ranges from 6.484×1011cm-2eV-1 in (EC-0.446)eV to 2.801×1010cm-2eV-1 in (EC-0.631,eV, of the Co/n-Si Schottky barrier diode. The results show the presence of a thin interfacial layer between the metal and the semiconductor.
Abstract：Electrical characteristics of Co/n-Si Schottky barrier diodes are analysed by current-voltage (I-V) and capacitance-voltage (C-V) techniques at room temperature. The electronic parameters such as ideality factor, barrier height and average series resistance are determined. The barrier height 0.76eV obtained from the C-V measurements is higher than that of the value 0.70eV obtained from the I-V measurements. The series resistance RS and the ideality factor n are determined from the d\ln(I)/dV plot and are found to be 193.62Ω and 1.34, respectively. The barrier height and the RS value are calculated from the H(I)-I plot and are found to be 0.71eV and 205.95Ω. Furthermore, the energy distribution of the interface state density is determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. The interface state density Nss ranges from 6.484×1011cm-2eV-1 in (EC-0.446)eV to 2.801×1010cm-2eV-1 in (EC-0.631,eV, of the Co/n-Si Schottky barrier diode. The results show the presence of a thin interfacial layer between the metal and the semiconductor.
G. Güler;Ö. Güllü;S. Karatas;Ö. F. Bakkaloglu. Electrical Characteristics of Co/n-Si Schottky Barrier Diodes Using I-V and C-V Measurements[J]. 中国物理快报, 2009, 26(6): 67301-067301.
G. Güler, Ö, . Güllü, S. Karatas, Ö, . F. Bakkaloglu. Electrical Characteristics of Co/n-Si Schottky Barrier Diodes Using I-V and C-V Measurements. Chin. Phys. Lett., 2009, 26(6): 67301-067301.
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