LI Di1**, JIA Li-Fang1, FAN Zhong-Chao1, CHENG Zhe2, WANG Xiao-Dong1, YANG Fu-Hua1, HE Zhi1
1Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2Semiconductor Lighting R&D Center, Chinese Academy of Sciences, Beijing 100083
Abstract：The electrical characteristics of Cu and Ni/Al AlGaN/GaN Schottky barrier diodes on Si substrates are compared. The onset voltage of Cu Schottky diodes is about 0.4 V less than the Ni/Al contact. For the Cu/Ni Schottky contact, the leakage current is 4.7×10?7 A/mm at ?10 V. After annealing, the leakage current is decreased to 3.7×10?7 A/mm for 400°C or 4.6×10?8 A/mm for 500°C, respectively. The electrical property is affected by the thickness ratio of Cu to Ni. The Cu/Ni for 80/20 nm shows a low onset voltage, while the Cu/Ni for 20/80 nm shows a low leakage current. Both breakdown voltages are above 720 V.
(Quantum well devices (quantum dots, quantum wires, etc.))
引用本文:
. [J]. 中国物理快报, 2015, 32(06): 68502-068502.
LI Di, JIA Li-Fang, FAN Zhong-Chao, CHENG Zhe, WANG Xiao-Dong, YANG Fu-Hua, HE Zhi. The Cu Based AlGaN/GaN Schottky Barrier Diode. Chin. Phys. Lett., 2015, 32(06): 68502-068502.
2015, Vol. 32 
