Performance Improved by Incorporating of Ru Atoms into Zr-Si Diffusion Barrier for Cu Metallization
WANG Ying1**, SONG Zhong-Xiao2, ZHANG Mi-Lin3
1College of Information and Communication Engineering, Harbin Engineering University, Harbin 150001 2State-Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049 3Key Laboratory of Superlight Materials and Surface Technology (Ministry of Education), Harbin Engineering University, Harbin 150001
Abstract：Thin Ru21Zr64Si15 films deposited on Si substrates by radio frequency reactive magnetron sputtering are studied and evaluated as diffusion barriers for Cu metallization. Cu/Ru21Zr64Si15/Si and Cu/Zr67Si33/Si structure samples are prepared under the same procedures for comparison. The thermal stability, phase formation, surface morphology and atomic depth profile of the Cu/Ru21Zr64Si15/Si and Cu/Zr67Si33/Si structures before and after annealing at different temperatures are investigated. In conjunction with these analyses, the Cu/Ru21Zr64Si15/Si contact system shows high thermal stability at least up to 650°C. The results obtained reveal that the incorporation of Ru atoms into the Zr67Si33 barrier layer is shown to be beneficial for improving the thermal stability of the Cu/barrier/Si contact system.
(Solid surfaces and solid-solid interfaces: structure and energetics)
引用本文:
. [J]. 中国物理快报, 2012, 29(9): 98501-098501.
WANG Ying, SONG Zhong-Xiao, ZHANG Mi-Lin. Performance Improved by Incorporating of Ru Atoms into Zr-Si Diffusion Barrier for Cu Metallization. Chin. Phys. Lett., 2012, 29(9): 98501-098501.
2012, Vol. 29 
