Abstract:An ultralow specific on-resistance (Ron,sp) trench metal-oxide-semiconductor field effect transistor (MOSFET) with an improved off-state breakdown voltage (BV) is proposed. It features a U-shaped gate around the drift region and an oxide trench inserted in the drift region (UG MOSFET). In the on-state, the U-shaped gate induces a high density electron accumulation layer along its sidewall, which provides a low-resistance current path from the source to the drain, realizing an ultralow Ron,sp. The value of Ron,sp is almost independent of the drift doping concentration, and thus the UG MOSFET breaks through the contradiction relationship between Ron,sp and the off-state BV. Moreover, the oxide trench folds the drift region, enabling the UG MOSFET to support a high BV with a shortened cell pitch. The UG MOSFET achieves an Ron,sp of 2 mΩ?cm2 and an improved BV of 216 V, superior to the best existing state-of-the-art transistors at the same BV level.
(Junction breakdown and tunneling devices (including resonance tunneling devices))
引用本文:
. [J]. 中国物理快报, 2015, 32(06): 68501-068501.
WANG Zhuo, LI Peng-Cheng, ZHANG Bo, FAN Yuan-Hang, XU Qing, LUO Xiao-Rong. Ultralow Specific on-Resistance Trench MOSFET with a U-Shaped Extended Gate. Chin. Phys. Lett., 2015, 32(06): 68501-068501.
[1] Wei J, Luo X R, Shi X L, Tian R C, Zhang B and Li Z J 2014 Proc. IEEE ISPSD (Waikoloa 15–19 June 2014) p 127 [2] Chen W, Zhang B and Li Z 2006 Electron. Lett.42 1314 [3] Cheng J B, Zhang B, Duan B X and Li Z J 2008 Chin. Phys. Lett.25 262 [4] Iqbal M M, Udrea F and Napoli E 2009 Proc. IEEE ISPSD (Barcelona 14–18 June 2009) p 247 [5] Ludikhuize A W 2000 Proc. IEEE ISPSD (Toulouse 22–25 May 2000) p 11 [6] Kim S, Kim J and Prosack H 2012 Proc. IEEE ISPSD (Bruges 3–7 June 2012) p 185 [7] Luo X R, Fan J, Wang Y G, Lei T F, Qiao M, Zhang B and Udrea F 2011 IEEE Electron Device Lett.32 185 [8] Fan Y H, Luo X R, Wang Pei, Zhou K, Zhang Bo and Li Z J 2013 Chin. Phys. Lett.30 088503 [9] Vestling L, Edholm B, Olsson J, Tiensuu S and Soderbarg A 1997 Proc. IEEE ISPSD (Weimar 26–29 May 1997) p 45 [10] Syau T, Venkatraman P and Baliga B J 1994 IEEE Trans. Electron Devices41 800 [11] Wang Y G, Luo X R, Ge R, Wu L J, Chen X and Yao G L 2011 Chin. Phys. B 20 077304