Performance of Organic Field Effect Transistors with Self-Improved Cu/Organic Interfaces
HU Zi-Yang1,2, CHENG Xiao-Man1,2,3, WU Ren-Lei1,2, WANG Zhong-Qiang1,2, YIN Shou-Gen 1,2
1Institute of Material Physics, Tianjin University of Technology, Tianjin 3003842Key Laboratory of Display Material and Photoelectric Devices (Ministry of Education), Tianjin University of Technology, Tianjin 3003843School of Science, Tianjin University of Technology, Tianjin 300384
Performance of Organic Field Effect Transistors with Self-Improved Cu/Organic Interfaces
HU Zi-Yang1,2, CHENG Xiao-Man1,2,3, WU Ren-Lei1,2, WANG Zhong-Qiang1,2, YIN Shou-Gen 1,2
1Institute of Material Physics, Tianjin University of Technology, Tianjin 3003842Key Laboratory of Display Material and Photoelectric Devices (Ministry of Education), Tianjin University of Technology, Tianjin 3003843School of Science, Tianjin University of Technology, Tianjin 300384
摘要We fabricate pentacene-based organic field effect transistors (OFETs) with Cu as source and drain (S-D) electrodes. The fabricated devices stored for ten hours under ambient atmospheric conditions exhibit superior performance compared with the as-prepared devices. The field-effect mobility increases from 0.012 to 0.03cm2V-1s-1, and the threshold voltage downshifts from -14 to -9V. The on/off current ratios are close to the order of 104. The improved performance of the stored devices is attributed to the formation of thin Cu oxide at the Cu electrodes/organic interfaces. These results suggest a simple and available way to optimize device properties and to reduce fabrication cost for OFETs.
Abstract：We fabricate pentacene-based organic field effect transistors (OFETs) with Cu as source and drain (S-D) electrodes. The fabricated devices stored for ten hours under ambient atmospheric conditions exhibit superior performance compared with the as-prepared devices. The field-effect mobility increases from 0.012 to 0.03cm2V-1s-1, and the threshold voltage downshifts from -14 to -9V. The on/off current ratios are close to the order of 104. The improved performance of the stored devices is attributed to the formation of thin Cu oxide at the Cu electrodes/organic interfaces. These results suggest a simple and available way to optimize device properties and to reduce fabrication cost for OFETs.
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2009, Vol. 26 
