Rectifying Characteristics and Transport Behavior in a Schottky Junction of CaCu 3Ti4O12 and Pt
CHEN Cong1,2, NING Ting-Yin2, WANG Can2**, ZHOU Yue-Liang2,ZHANG Dong-Xiang2, WANG Pei1, MING Hai1, YANG Guo-Zhen2
1Anhui Key Laboratory of Optoelectronic Science and Technology, University of Science and Technology of China, Hefei 230026 2Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190
Rectifying Characteristics and Transport Behavior in a Schottky Junction of CaCu 3Ti4O12 and Pt
CHEN Cong1,2, NING Ting-Yin2, WANG Can2**, ZHOU Yue-Liang2,ZHANG Dong-Xiang2, WANG Pei1, MING Hai1, YANG Guo-Zhen2
1Anhui Key Laboratory of Optoelectronic Science and Technology, University of Science and Technology of China, Hefei 230026 2Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190
摘要CaCu3Ti4O12 (CCTO) thin films were fabricated on ITO−covered MgO (100) substrates. The rectification characteristics were observed in the CCTO capacitance structure with Pt top electrodes at temperatures ranging from 150 K to 330 K, which are attributed to the formation of a Schottky junction between n-type semiconducting CCTO and Pt due to the difference of their work functions. At low forward-bias voltage, the current-voltage characteristics of the Schottky junction follow J=JsD exp[qV/(k0T)]. A strong decrease in ideality factor with the increasing temperature is obtained by linear fitting at the low bias voltage.
Abstract：CaCu3Ti4O12 (CCTO) thin films were fabricated on ITO−covered MgO (100) substrates. The rectification characteristics were observed in the CCTO capacitance structure with Pt top electrodes at temperatures ranging from 150 K to 330 K, which are attributed to the formation of a Schottky junction between n-type semiconducting CCTO and Pt due to the difference of their work functions. At low forward-bias voltage, the current-voltage characteristics of the Schottky junction follow J=JsD exp[qV/(k0T)]. A strong decrease in ideality factor with the increasing temperature is obtained by linear fitting at the low bias voltage.
(Surface double layers, Schottky barriers, and work functions)
引用本文:
CHEN Cong;NING Ting-Yin;WANG Can**;ZHOU Yue-Liang;ZHANG Dong-Xiang;WANG Pei;MING Hai;YANG Guo-Zhen
. Rectifying Characteristics and Transport Behavior in a Schottky Junction of CaCu 3Ti4O12 and Pt[J]. 中国物理快报, 2011, 28(8): 87304-087304.
CHEN Cong, NING Ting-Yin, WANG Can**, ZHOU Yue-Liang, ZHANG Dong-Xiang, WANG Pei, MING Hai, YANG Guo-Zhen
. Rectifying Characteristics and Transport Behavior in a Schottky Junction of CaCu 3Ti4O12 and Pt. Chin. Phys. Lett., 2011, 28(8): 87304-087304.
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