Transformation from AA to AB-Stacked Bilayer Graphene on α−SiO2 under an Electric Field
LIU Yan1, AO Zhi-Min3**, WANG Tao2**, WANG Wen-Bo2, SHENG Kuang2, YU Bin2,4
1Second Affiliated Hospital, College of Medicine, Zhejiang University, Hangzhou 230031 2College of Electrical Engineering, Zhejiang University, Hangzhou 230031 3School of Materials Science and Engineering, The University of New South Wales, Sydney, NSW 2052, Australia 4College of Nanoscale Science and Engineering, State University of New York, Albany, New York 12203, USA
Transformation from AA to AB-Stacked Bilayer Graphene on α−SiO2 under an Electric Field
LIU Yan1, AO Zhi-Min3**, WANG Tao2**, WANG Wen-Bo2, SHENG Kuang2, YU Bin2,4
1Second Affiliated Hospital, College of Medicine, Zhejiang University, Hangzhou 230031 2College of Electrical Engineering, Zhejiang University, Hangzhou 230031 3School of Materials Science and Engineering, The University of New South Wales, Sydney, NSW 2052, Australia 4College of Nanoscale Science and Engineering, State University of New York, Albany, New York 12203, USA
摘要The energetic and electronic structure of bilayered graphene (BLG) with AA stacking arrangement on a SiO2 substrate is investigated in the presence of an electric field F of different intensities by ab initio density functional calculations. The AA−stacked bilayer graphene is stable on the SiO2 substrate in the absence of an electric field. However, as F increases, the AA-stacked bilayer graphenes are gradually shifted with each other and finally transfers into AB-stacked bilayer graphenes. The bandgap is accordingly changed.
Abstract：The energetic and electronic structure of bilayered graphene (BLG) with AA stacking arrangement on a SiO2 substrate is investigated in the presence of an electric field F of different intensities by ab initio density functional calculations. The AA−stacked bilayer graphene is stable on the SiO2 substrate in the absence of an electric field. However, as F increases, the AA-stacked bilayer graphenes are gradually shifted with each other and finally transfers into AB-stacked bilayer graphenes. The bandgap is accordingly changed.
(Semiconductor-device characterization, design, and modeling)
引用本文:
LIU Yan;AO Zhi-Min**;WANG Tao**;WANG Wen-Bo;SHENG Kuang;YU Bin;
. Transformation from AA to AB-Stacked Bilayer Graphene on α−SiO2 under an Electric Field[J]. 中国物理快报, 2011, 28(8): 87303-087303.
LIU Yan, AO Zhi-Min**, WANG Tao**, WANG Wen-Bo, SHENG Kuang, YU Bin,
. Transformation from AA to AB-Stacked Bilayer Graphene on α−SiO2 under an Electric Field. Chin. Phys. Lett., 2011, 28(8): 87303-087303.
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