1Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Department of Physics and Synergetic Innovation Center for Quantum Effects and Applications, Hunan Normal University, Changsha 410081, China 2Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, College of Physics and Energy, Fujian Normal University, Fuzhou 350117, China
Abstract：We theoretically investigate physical properties of two-dimensional (2D) Fe$_{2}$Ga$_{2}$S$_{5}$ by employing first-principles calculations. It is found that it is an antiferromagnet with zigzag magnetic configuration orienting in the in-plane direction, with Néel temperatures around 160 K. The band structure of the ground state shows that it is a semiconductor with the indirect band gap of about 0.9 eV, which could be effectively tuned by the lattice strain. We predict that the carrier transport is highly anisotropic, with the electron mobility up to the order of $\sim$$10^3$ cm$^2$/(V$\cdot$s) much higher than the hole. These fantastic electronic properties make 2D Fe$_{2}$Ga$_{2}$S$_{5}$ a promising candidate for the future spintronics.
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Zhu J X, Janoschek M, Chaves D S, Cezar J C, Durakiewicz T, Ronning F, Sassa Y, Mansson M, Scott B L, Wakeham N, Bauer E D and Thompson J D 2016 Phys. Rev. B93 144404
2020, Vol. 37 
