1Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials $&$ Micro-nano Devices, Renmin University of China, Beijing 100872 2Condensed Matter Physics and Materials Science Division, Brookhaven National Laboratory, Upton, New York 11973, USA
Abstract：We report the growth of ternary half-Heusler MnPtSn single crystals and detailed study on its structural and physical properties. MnPtSn single crystal has a larger lattice parameter than that in polycrystal and it exhibits antiferromagnetism with transition temperature $T_{\rm N}$ at about 215 K, distinctly different from the ferromagnetism of MnPtSn polycrystal. Hall resistivity measurement indicates that the dominant carriers are hole-type and the nearly temperature-independent carrier concentration reaches about $2.86\times10^{22}$ cm$^{-3}$ at 5 K. Moreover, the carrier mobility is also rather low (4.7 cm$^{2}$$\cdot$V$^{-1}$s$^{-1}$ at 5 K). The above results strongly suggest that the significant Mn/Sn anti-site defects, i.e., the content of Mn in MnPtSn single crystal, play a vital role on structural, magnetic and transport properties.
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2020, Vol. 37 
