Influence of Fluorine on the Conductivity and Oxidation of Silicon Nanomembranes after Hydrofluoric Acid Treatment
ZHAO Xiang-Fu**, HAN Ping, ZHANG Rong, ZHENG You-Dou
School of Electronic Science and Engineering, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, National Laboratory of Solid State Microstructure, Nanjing University, Nanjing 210093
Influence of Fluorine on the Conductivity and Oxidation of Silicon Nanomembranes after Hydrofluoric Acid Treatment
ZHAO Xiang-Fu**, HAN Ping, ZHANG Rong, ZHENG You-Dou
School of Electronic Science and Engineering, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, National Laboratory of Solid State Microstructure, Nanjing University, Nanjing 210093
摘要After immersion in hydrofluoric acid, the sheet resistance of a 220-nm-thick silicon nanomembrane, measured in dry air by van der Pauw method, drops around two orders of magnitude initially, then increases and reaches the level of a sample with a native oxide surface in about one month. The surface component and oxidation rate are also characterized by x-ray photo electronic spectroscopy measurement. Fluorine is found to play a significant role in improving conductivity and has no apparent influence on the oxidation rate after hydrofluoric acid treatment.
Abstract：After immersion in hydrofluoric acid, the sheet resistance of a 220-nm-thick silicon nanomembrane, measured in dry air by van der Pauw method, drops around two orders of magnitude initially, then increases and reaches the level of a sample with a native oxide surface in about one month. The surface component and oxidation rate are also characterized by x-ray photo electronic spectroscopy measurement. Fluorine is found to play a significant role in improving conductivity and has no apparent influence on the oxidation rate after hydrofluoric acid treatment.
ZHAO Xiang-Fu**;HAN Ping;ZHANG Rong;ZHENG You-Dou
. Influence of Fluorine on the Conductivity and Oxidation of Silicon Nanomembranes after Hydrofluoric Acid Treatment[J]. 中国物理快报, 2011, 28(8): 87305-087305.
ZHAO Xiang-Fu**, HAN Ping, ZHANG Rong, ZHENG You-Dou
. Influence of Fluorine on the Conductivity and Oxidation of Silicon Nanomembranes after Hydrofluoric Acid Treatment. Chin. Phys. Lett., 2011, 28(8): 87305-087305.
[1] Marinkovic M, Hashem E, Chan K Y, Gordijn A, Stiebig H and Knipp D 2010 Appl. Phys. Lett. 97 073502
[2] Saha T K and Zhou WD 2009 J. Phys. D: Appl. Phys. 42 085115
[3] Menard E, Nuzzo RG and Rogers J A 2005 Appl. Phys. Lett. 86 093507
[4] Yuan H C, Ma Z Q, Robert M M, Savage D E and Lagally MG 2006 J. Appl. Phys. 100 013708
[5] Scott S, Peng W, Kiefer A, Jiang H, knezevic I, Savage D, Eriksson M and Lagally M 2009 ACS NANO 3 1683
[6] Cui Y , Wei Q , Park H and Lieber C 2001 Science 293 1289
[7] Yuan H C, Shin G, Sun L, Bhattacharya P, Lagally M G, Celler G K and Ma Z 2009 Appl. Phys. Lett. 94 013102
[8] Yablonovitch E, Allara D L, Chang C C, Gmitter T and Bright T T 1986 Phys. Rev. Lett. 57 249
[9] Thornton J M C and Williams R H 1989 Semicond. Sci. Technol. 4 847
[10] Watanabe D, En A, Nakamura S, Suhara M and Okumura T 2003 Appl. Surf. Sci. 216 24
[11] Schlaf R, Hinogami R, Fujitani M, Yae S and Nakato Y 1999 J. Vac. Sci. Technol. A 17 164
[12] Angermann H 2005 Solid State Phenom. 103-104 23
[13] Huang L J and Lau W M 1992 Appl. Phys. Lett. 60 1108
[14] Ling L, Kuwabara S, Abe T and Shimura F 1993 J. Appl. Phys. 73 3018
[15] Kato Y, Ito T and Hiraki A 1988 Jpn. J. Appl. Phys. 27 L1406
[16] Gräf D, Grundner M and Schulz R 1989 J. Vac. Sci. Technol. A 7 808
[17] Pauw L 1958 Philips Res. Repts. 13 1
[18] Takahagi T, Lshitani A, Kuroda H and Nagasawa Y 1991 J. Appl. Phys. 69 803
2011, Vol. 28 
