Experimental $I$–$V$ and $C$–$V$ Analysis of Schottky-Barrier Metal-Oxide-Semiconductor Field Effect Transistors with Epitaxial NiSi$_{2}$ Contacts and Dopant Segregation
1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 2Peter Grünberg Institute 9, JARA-FIT, Forschungszentrum Jülich, Jülich 52425, Germany 3College of Sciences, Shanghai University, Shanghai 200444 4College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060 5University of Chinese Academy of Sciences, Beijing 100049
Abstract：We present an experimental analysis of Schottky-barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) fabricated on ultrathin body silicon-on-insulator substrates with a steep junction by the dopant implantation into the silicide process. The subthreshold swing of such SB-MOSFETs reaches 69 mV/dec. Emphasis is placed on the capacitance-voltage analysis of p-type SB-MOSFETs. According to the measurements of gate-to-source capacitance $C_{\rm gs}$ with respect to $V_{\rm gs}$ at various $V_{\rm ds}$, we find that a maximum occurs at the accumulation regime due to the most imbalanced charge distribution along the channel. At each $C_{\rm gs}$ peak, the difference between $V_{\rm gs}$ and $V_{\rm ds}$ is equal to the Schottky barrier height (SBH) for NiSi$_{2}$ on highly doped silicon, which indicates that the critical condition of channel pinching off is related with SBH for source/drain on channel. The SBH for NiSi$_{2}$ on highly doped silicon can affect the pinch-off voltage and the saturation current of SB-MOSFETs.
Yamauchi T, Nishi Y, Tsuchiya Y, Kinoshita A, Koga J and Kato K 2007 IEEE International Electron Devices Meeting (Washington, DC, America 10–12 December 2007) p 963
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Huang W, Zhang L C, Gao Y Z and Jin H Y 2005 Acta Phys. Sin.54 2252 (in Chinese)
2017, Vol. 34 
