A Peak in Density Dependence of Electron Spin Relaxation Time in n-Type Bulk GaAs in the Metallic Regime
SHEN Ka
Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026Department of Physics, University of Science and Technology of China, Hefei 230026
A Peak in Density Dependence of Electron Spin Relaxation Time in n-Type Bulk GaAs in the Metallic Regime
SHEN Ka
Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026Department of Physics, University of Science and Technology of China, Hefei 230026
摘要We demonstrate that the peak in the density dependence of electron spin relaxation time in n-type bulk GaAs in the metallic regime predicted by Jiang and Wu [Phys.Rev.B 79(2009)125206] has been realized experimentally in the latest work [arXiv:0902.0270] by Krauβ, et al.
Abstract：We demonstrate that the peak in the density dependence of electron spin relaxation time in n-type bulk GaAs in the metallic regime predicted by Jiang and Wu [Phys.Rev.B 79(2009)125206] has been realized experimentally in the latest work [arXiv:0902.0270] by Krauβ, et al.
SHEN Ka. A Peak in Density Dependence of Electron Spin Relaxation Time in n-Type Bulk GaAs in the Metallic Regime[J]. 中国物理快报, 2009, 26(6): 67201-067201.
SHEN Ka. A Peak in Density Dependence of Electron Spin Relaxation Time in n-Type Bulk GaAs in the Metallic Regime. Chin. Phys. Lett., 2009, 26(6): 67201-067201.
[1] Awschalom D D, Loss D and Samarth N 2002 Semiconductor Spintronics and Quantum Computation (Berlin:Springer) \u{Zuti\'c I, Fabian J and Sarma S D 2004 Rev. Mod.Phys. 76 323 [2] Dzhioev R I, Korenev V L, Merkulov I A, Zakharchenya BP, Gammon D, Efros AI L and Katzer D S 2002 Phys. Rev.Lett. 88 256801 [3] Dzhioev R I, Zakharchenya B P, Korenev V L, and StepanovaM N 1997 Phys. Solid State 39 1765 [4] Dzhioev R I, Kavokin K V, Korenev V L, Lararev M V,Meltser B Ya, Stepanova M N, Zakharchenya B P, Gammon D and KatzerD S 2002 Phys. Rev. B 66 245204 [5] Kikkawa J M and Awschalom D D 1998 Phys. Rev. Lett. 80 4313 [6] Furis M, Smith D L, Crooker S A and Reno J L 2006 Appl. Phys. Lett. 89 102102 [7] Shklovskii B I and Efros A L 1984 ElectronicProperties of Doped Semiconductors (Berlin: Springer) [8] D'yakonov M I and Perel' V I 1971 Zh. \'Eksp. Teor.Fiz. 60 1954 [1971 Sov. Phys. JETP 33 1053] D'yakonov M I and Perel' V I 1971 Fiz. Tverd. Tela(Leningrad) 13 3581 [1972 Sov. Phys. Solid State 13 3023] [9] Jiang J H and Wu M W 2009 Phys. Rev. B 79125206 [10] Jiang J H, Zhou Y, Korn T, Sch\"uller C and Wu M W 2009 Phys. Rev. B 79 155201 [11] Zhou J and Wu M W 2008 Phys. Rev. B 77075318 [12] Weng M Q and Wu M W 2003 Phys. Rev. B 68075312 Weng M Q, Wu M W and Jiang L 2004 Phys. Rev. B 69 245320 [13] Wu M W and Ning C Z 2000 Eur. Phys. J. B 18373 Wu M W and Metiu H 2000 Phys. Rev. B 61 2945 Wu M W 2001 J. Phys. Soc. Jpn. 70 2195 [14] Zhou J, Cheng J L and Wu M W 2007 Phys. Rev. B 75 045305 [15] Krau{\ss M, Bratschitsch R, Chen Z, Cundiff S T andSchneider H C arXiv:0902.0270 [16] Bronold F X, Saxena A and Smith D L 2004 Phys. Rev.B 70 245210 [17] Haug H and Jauho A P 1996 Quantum Kinetics inTransport and Optics of Semiconductors (Berlin: Springer) [18] Dresshaus G 1995 Phys. Rev. 100 580 [19] Hilton D J and Tang C L 2002 Phys. Rev. Lett. 89 146601 [20] Krau{\ss M, Aeschlimann M and Schneider H C 2008 Phys. Rev. Lett. 100 256601 [21] Jancu J M, Scholz R, de Andrada e Silva E A and LaRocca G C 2005 Phys. Rev. B 72 193201 [22] Glazov M M and Ivchenko E L 2002 Pis'ma Zh. \'Eksp.Teor. Fiz. 75 476 [2002 JETP Lett. 75 403] [23] Leyland W J, John G H, Harley R T, Glazov M M, Ivchenko EL, Ritchie D A, Farrer I, Shields A J and Henini M 2007 Phys.Rev. B 75 165309 [24] Harley R T 2008 in Spin Physics in Semiconductored D'yakonov M I (Berlin: Springer)
2009, Vol. 26 
