A High Performance Silicon-on-Insulator LDMOSTT Using Linearly Increasing Thickness Techniques
GUO Yu-Feng1,2, WANG Zhi-Gong1, SHEU Gene3, CHENG Jian-Bing2
1Institute of RF- & OE-ICs, Southeast University, Nanjing 210096 2School of Electronics Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003 3Department of Computer Science & Information Engineering, Asia University, Taichung 41354
A High Performance Silicon-on-Insulator LDMOSTT Using Linearly Increasing Thickness Techniques
GUO Yu-Feng1,2, WANG Zhi-Gong1, SHEU Gene3, CHENG Jian-Bing2
1Institute of RF- & OE-ICs, Southeast University, Nanjing 210096 2School of Electronics Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003 3Department of Computer Science & Information Engineering, Asia University, Taichung 41354
We present a new technique to achieve uniform lateral electric field and maximum breakdown voltage in lateral double-diffused metal-oxide-semiconductor transistors fabricated on silicon-on-insulator substrates. A linearly increasing drift-region thickness from the source to the drain is employed to improve the electric field distribution in the devices. Compared to the lateral linear doping technique and the reduced surface field technique, two-dimensional numerical simulations show that the new device exhibits reduced specific on-resistance, maximum off- and on-state breakdown voltages, superior quasi-saturation characteristics and improved safe operating area.
We present a new technique to achieve uniform lateral electric field and maximum breakdown voltage in lateral double-diffused metal-oxide-semiconductor transistors fabricated on silicon-on-insulator substrates. A linearly increasing drift-region thickness from the source to the drain is employed to improve the electric field distribution in the devices. Compared to the lateral linear doping technique and the reduced surface field technique, two-dimensional numerical simulations show that the new device exhibits reduced specific on-resistance, maximum off- and on-state breakdown voltages, superior quasi-saturation characteristics and improved safe operating area.
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