Contact-Size-Dependent Cutoff Frequency of Bottom-Contact Organic Thin Film Transistors
SUN Jing, WANG Hong** , WANG Zhan, WU Shi-Wei, MA Xiao-Hua**
School of Advanced Materials and Nanotechnology, Key Laboratory of Wide Band-Gap Semiconductor Technology, Xidian University, Xi'an 710071
Abstract :The contact-size-dependent characteristic of cutoff frequency fT in bottom-contact organic thin film transistors (OTFTs) is studied. The effects of electrode thickness, field-effect mobility, channel length and gate-source voltage on the contact length (source and drain electrodes' length) related contact resistance of bottom-contact OTFTs are performed with a modified transmission line model. It is found that the contact resistance increases dramatically when the contact length is scaled down to 200 nm. With the help of the contact length related contact resistance, contact-size-dependent fT of bottom-contact OTFTs is studied and it is found that fT increases with the decrease of the contact length in bottom-contact OTFTs.
收稿日期: 2015-04-28
出版日期: 2015-10-30
:
73.40.Cg
(Contact resistance, contact potential)
73.61.Ph
(Polymers; organic compounds)
85.30.Tv
(Field effect devices)
[1] Kaltenbrunner M et al 2013 Nature 499 458 [2] Nakayama K et al 2011 Adv. Mater. 23 1626 [3] Chen Y N, Xu Z, Zhao S L and Yin F F 2013 Chin. Phys. Lett. 30 037302 [4] Wu S H, Ryosuke N, Masatsugu T, Zhang Q S and Chihaya A 2014 Chin. Phys. B 23 098502 [5] Sekitani T and Someya T 2010 Adv. Mater. 22 2228 [6] Wang H, Li C H, Pan F, Wang H B and Yan D H 2009 Chin. Phys. Lett. 26 118501 [7] Chen C W, Chang T C, Liu P T, Lu H Y, Wang K C, Huang C S, Ling C C and Tseng T Y 2005 IEEE Electron Device Lett. 26 731 [8] Sun Q J, Xu Z, Zhao S L, Zhang F J, Gao L Y, Tian X Y and Wang Y S 2010 Acta Phys. Sin. 59 8125 (in Chinese) [9] Yu X G, Yu J S, Huang W and Zeng H J 2012 Chin. Phys. B 21 117307 [10] Tseng H R, Phan H, Luo C, Wang M, Perez L, Patel S, Kramer E, Nguyen T, Bazan G and Heeger A 2014 Adv. Mater. 26 2993 [11] Ma F, Wang S R, Li X G and Yan D H 2011 Chin. Phys. Lett. 28 118501 [12] Yuan Y, Giri G, Ayzner A L, Zoombelt A P, Mannsfeld S, Chen J H, Nordlund D, Toney M F, Huang J S and Bao Z N 2014 Nat. Commun. 5 3005 [13] Hirose T, Nagase T, Kobayashi T, Ueda R, Otomo A and Naito H 2010 Appl. Phys. Lett. 97 083301 [14] Wang H, Li L, Ji Z Y, Lu C Y, Guo J W, Wang L and Liu M 2013 IEEE Electron Device Lett. 34 69 [15] Wang H, Wang W, Sun P X, Ma X H, Li L, Liu M and Hao Y 2015 IEEE Electron Device Lett. 36 609 [16] Wang W, Li L, Ji Z Y, Ye T C, Lu N D, Li Z G, Li D M and Liu M 2013 IEEE Electron Device Lett. 34 1301 [17] Xu M S, Nakamura M, Sakai M and Kudo K 2007 Adv. Mater. 19 371 [18] Uemura T, Matsumoto T, Miyake K, Uno M, Ohnishi S, Kato T, Katayama M, Shinamura S, Hamada M, Kang M, Takimiya K, Mitsui C, Okamoto T and Takeya J 2014 Adv. Mater. 26 2983 [19] Ante F, Kalblein D, Zaki T, Zschieschang U, Takimiya K, Ikeda M, Sekitani T, Someya T, Burghartz J N, Kern K and Klauk H 2012 Small 8 73 [20] Richards T J and Sirringhaus H 2007 J. Appl. Phys. 102 094510 [21] Chiang C, Martin S, Kanicki J, Uagi Y, Yukawa T and Takeuchi S 1998 Jpn. J. Appl. Phys. 37 5914 [22] Fan C L, Lin Y Z, Wang S J and Huang C H 2012 Org. Electron. 13 2924 [23] Park J, Yang R D, Colesniuc C N and Sharoni A 2008 Appl. Phys. Lett. 92 193311 [24] Shim C, Maruoka F and Hattori R 2010 IEEE Trans. Electron Devices 57 195
[1]
. [J]. 中国物理快报, 2017, 34(10): 106801-.
[2]
. [J]. 中国物理快报, 2016, 33(01): 17201-017201.
[3]
. [J]. 中国物理快报, 2015, 32(11): 117204-117204.
[4]
. [J]. 中国物理快报, 2013, 30(5): 57303-057303.
[5]
. [J]. 中国物理快报, 2013, 30(3): 37302-037302.
[6]
CHEN Shun-Sheng, YANG Chang-Ping, LUO Xiao-Jing, Medvedeva I V. Alternating-Current Transport Properties in Nd0.7 Sr0.3 MnO3 Ceramic with Secondary Phases [J]. 中国物理快报, 2012, 29(7): 77303-077303.
[7]
CHEN Shun-Sheng1,2 , YANG Chang-Ping1,5** , LUO Xiao-Jing1 , Bärner K.3 , Medvedeva I. V.4 . Alternating-Current Transport Properties of the Interface between Nd0.7 Sr0.3 MnO3 Ceramic and a Ag Electrode [J]. 中国物理快报, 2012, 29(2): 27302-027302.
[8]
ZENG Chang;ZHANG Shu-Ming**;WANG Hui;LIU Jian-Ping;WANG Huai-Bing;LI Zeng-Cheng;FENG Mei-Xin;ZHAO De-Gang;LIU Zong-Shun;JIANG De-Sheng;YANG Hui. Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN [J]. 中国物理快报, 2012, 29(1): 17301-017301.
[9]
ZHAO Geng;CHENG Xiao-Man;**;TIAN Hai-Jun;DU Bo-Qun;LIANG Xiao-Yu
. Improved Performance of Pentacene Organic Field-Effect Transistors by Inserting a V2 O5 Metal Oxide Layer [J]. 中国物理快报, 2011, 28(12): 127203-127203.
[10]
CHANG Hong;**;ZHAO Yong-Gang
. Enhanced Magnetic and Ferroelectric Properties and Current-Voltage Hysteresis by Addition of La and Ti to BiFeO3 on 0.7%Nb−SrTiO3 [J]. 中国物理快报, 2011, 28(6): 67503-067503.
[11]
HU Zi-Yang;CHENG Xiao-Man;;WU Ren-Lei;WANG Zhong-Qiang;YIN Shou-Gen;. Performance of Organic Field Effect Transistors with Self-Improved Cu/Organic Interfaces [J]. 中国物理快报, 2009, 26(3): 37305-037305.
[12]
UAN Jin-She;CHEN Guang-De;QI Ming;LI Ai-Zhen;XIE Lun-Jun. Surface Properties of Unintentionally Doped GaN Film and Its
Contact Behaviour with Ni/Cr/Au Compound Metals [J]. 中国物理快报, 2003, 20(10): 1841-1843.
[13]
ZHEN Cong-Mian;LIU Xue-Qin;YAN Zhi-Jun;GONG Heng-Xiang;WANG Yin-Yue. Au/Ti/p-Diamond Ohmic Contacts Prepared by Radio-Frequency Sputtering [J]. 中国物理快报, 2000, 17(11): 827-828.
[14]
LIU Xing-zhao;YANG Bang-chao;JIA Yu-min;LI Yan-rong. Electrical Characteristics of Metal Contacts to Boron Doped
Polycrystalline Semiconducting Diamond Thin Films
[J]. 中国物理快报, 1996, 13(7): 541-544.
[15]
TANG Wenhui;JING Fuqian;HU Jinbiao;ZHANG Ruoqi. New Method for Determining the Shock Temperature of Metals [J]. 中国物理快报, 1994, 11(9): 569-572.