Effect of Metal Contact and Rapid Thermal Annealing on Electrical Characteristics of Graphene Matrix
S. Fahad1, M. Ali1**, S. Ahmed1, S. Khan1, S. Alam1, S. Akhtar2
1Advanced Electronics Laboratories, International Islamic University Islamabad, Pakistan 2Department of Physics, Federal Urdu University of Arts, Sciences & Technology, Karachi, Pakistan
Abstract：Development of graphene field effect transistors (GFETs) faces a serious challenge of graphene interface to the dielectric material. A single layer of intrinsic graphene has an average sheet resistance of the order of 1–5 k$\Omega/\square$. The intrinsic nature of graphene leads to higher contact resistance yielding into the outstanding properties of the material. We design a graphene matrix with minimized sheet resistance of 0.185 $\Omega/\square$ with Ag contacts. The developed matrices on silicon substrates provide a variety of transistor design options for subsequent fabrication. The graphene layer is developed over 400 nm nickel in such a way as to analyze hypersensitive electrical properties of the interface for exfoliation. This work identifies potential of the design in the applicability of few-layer GFETs with less process steps with the help of analyzing the effect of metal contact and post-process annealing on its electrical fabrication.
. [J]. 中国物理快报, 2017, 34(10): 106801-.
S. Fahad, M. Ali, S. Ahmed, S. Khan, S. Alam, S. Akhtar. Effect of Metal Contact and Rapid Thermal Annealing on Electrical Characteristics of Graphene Matrix. Chin. Phys. Lett., 2017, 34(10): 106801-.
2017, Vol. 34 
