Improvement of Metal-Graphene Ohmic Contact Resistance in Bilayer Epitaxial Graphene Devices
HE Ze-Zhao1,2, YANG Ke-Wu1,2, YU Cui2, LI Jia2, LIU Qing-Bin2, LU Wei-Li2, FENG Zhi-Hong2**, CAI Shu-Jun2
1School of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300130 2National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051
Abstract：We report on an improved metal-graphene ohmic contact in bilayer epitaxial graphene on a SiC substrate with contact resistance below 0.1 Ω?mm. Monolayer and bilayer epitaxial graphenes are prepared on a 4H-SiC substrate in this work. Their contact resistances are measured by a transfer length method. An improved photoresist-free device fabrication method is used and is compared with the conventional device fabrication method. Compared with the monolayer graphene, the contact resistance Rc of bilayer graphene improves from an average of 0.24 Ω?mm to 0.1 Ω?mm. Ohmic contact formation mechanism analysis by Landauer's approach reveals that the obtained low ohmic contact resistance in bilayer epitaxial graphene is due to their high carrier density, high carrier transmission probability, and p-type doping introduced by contact metal Au.
. [J]. 中国物理快报, 2015, 32(11): 117204-117204.
HE Ze-Zhao, YANG Ke-Wu, YU Cui, LI Jia, LIU Qing-Bin, LU Wei-Li, FENG Zhi-Hong, CAI Shu-Jun. Improvement of Metal-Graphene Ohmic Contact Resistance in Bilayer Epitaxial Graphene Devices. Chin. Phys. Lett., 2015, 32(11): 117204-117204.
2015, Vol. 32 
