Au/Ti/p-Diamond Ohmic Contacts Prepared by Radio-Frequency Sputtering

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	ZHEN Cong-Mian
	LIU Xue-Qin
	YAN Zhi-Jun
	GONG Heng-Xiang
	WANG Yin-Yue

关键词 ： 73.40.Ns, 73.40.Cg, 68.48.+f

Abstract： The as-deposited Au/Ti/p-diamond contacts prepared by rf sputtering are ohmic. The ohmic characteristics of the contacts are improved after annealing. As for the as-deposited and annealed contacts, the specific contact resistivities of 2.886 x 10^-3 and 2.040 x 10^-4 Ω.cm² are obtained, respectively. The x-ray photoelectron spectroscopy analysis indicates that the titanium carbide formation occurs at the interface between titanium and the diamond substrate in the as-deposited state, and no TiO₂ is observed.

Key words： 73.40.Ns 73.40.Cg 68.48.+f

出版日期: 2000-11-01

:	73.40.Ns	(Metal-nonmetal contacts)
	73.40.Cg	(Contact resistance, contact potential)
	68.48.+f

引用本文:

ZHEN Cong-Mian;LIU Xue-Qin;YAN Zhi-Jun;GONG Heng-Xiang;WANG Yin-Yue. Au/Ti/p-Diamond Ohmic Contacts Prepared by Radio-Frequency Sputtering[J]. 中国物理快报, 2000, 17(11): 827-828.
ZHEN Cong-Mian, LIU Xue-Qin, YAN Zhi-Jun, GONG Heng-Xiang, WANG Yin-Yue. Au/Ti/p-Diamond Ohmic Contacts Prepared by Radio-Frequency Sputtering. Chin. Phys. Lett., 2000, 17(11): 827-828.

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https://cpl.iphy.ac.cn/CN/ 或 https://cpl.iphy.ac.cn/CN/Y2000/V17/I11/827