Abstract： Low resistance ohmic contacts have been fabricated on chemical vapor deposition grown polycrystalline B doped semiconducting diamond thin films by thermally activated solid state reaction process. A bilayer metallization of Ti/Au was employed. After annealing at 820°C for 10min in Ar atmosphere, the specific contact resistance of 2 x 10-4 Ω.cm2 has been obtained. The properties of the diamond/Ti interfaces have been characterized by using x-rays diffraction and scanning electron microscopy. The performance of semiconducting diamond thin film thermistors has been reported.
LIU Xing-zhao;YANG Bang-chao;JIA Yu-min;LI Yan-rong. Electrical Characteristics of Metal Contacts to Boron Doped
Polycrystalline Semiconducting Diamond Thin Films
[J]. 中国物理快报, 1996, 13(7): 541-544.
LIU Xing-zhao, YANG Bang-chao, JIA Yu-min, LI Yan-rong. Electrical Characteristics of Metal Contacts to Boron Doped
Polycrystalline Semiconducting Diamond Thin Films
. Chin. Phys. Lett., 1996, 13(7): 541-544.
1996, Vol. 13 
