中国物理快报  2014, Vol. 31 Issue (12): 128101-128101    DOI: 10.1088/0256-307X/31/12/128101
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Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer
ZHOU Xu-Liang, PAN Jiao-Qing**, YU Hong-Yan, LI Shi-Yan, WANG Bao-Jun, BIAN Jing, WANG Wei
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083