摘要GaN nanowires are grown by hydride vapor phase epitaxy using nickel as a catalyst. The properties of the obtained GaN nanowires are characterized by scanning and transmission electron microscopy, electron diffraction, room-temperature photoluminescence and energy dispersive spectroscopy. The results show that the nanowires are wurtzite single crystals growing along the [0001] direction and a redshift in the photoluminescence is observed due to a superposition of several effects. The Raman spectra are close to those of the bulk GaN and the significantly broadening of those modes indicates the phonon confinement effects associated with the nanoscale dimensions of the system.
Abstract：GaN nanowires are grown by hydride vapor phase epitaxy using nickel as a catalyst. The properties of the obtained GaN nanowires are characterized by scanning and transmission electron microscopy, electron diffraction, room-temperature photoluminescence and energy dispersive spectroscopy. The results show that the nanowires are wurtzite single crystals growing along the [0001] direction and a redshift in the photoluminescence is observed due to a superposition of several effects. The Raman spectra are close to those of the bulk GaN and the significantly broadening of those modes indicates the phonon confinement effects associated with the nanoscale dimensions of the system.
[1] Ponce F A and Bour D P 1997 Nature 386 351
[2] Morales A M and Lieber C M 1998 Science 279 208
[3] Wagner R S and Ellis W C 1964 Appl. Phys. Lett. 4 89
[4] Chen G S, Zhang L D, Zhu Y, Fei G T, Li L, Mo C M and Mao Y Q 1999 Appl. Phys. Lett. 75 2455
[5] Zhong Z, Qian F, Wang D and Lieber C M 2003 Nano Lett. 3 343
[6] Chen C C and Yeh C C 2000 Adv. Mater. 12 738
[7] Kim T Y, Lee S H, Mo Y H, Shim H W, Nahm K S, Suh E K, Yang J W, Lim K Y and Park G S 2003 J. Cryst. Growth 257 97
[8] Kuykendall T, Pauzauskie P J, Zhang Y F, Goldberger J, Sirbuly D, Denlinger J and Yang P D 2004 Nature Mater. 3 524
[9] Darakchieva V, Monemar B and Usui A 2007 Appl. Phys. Lett. 91 031911
[10] Wang W Z, Lan C, Li Y Z, Hong K Q and Wang G H 2002 Chem. Phys. Lett. 366 220
[11] Ridley B K 1999 Quantum Process in Semiconductors (New York: Oxford University) chap 2 p 59
[12] George S, Ilan S, Warren M and Venkatesh N 2005 Nanotechnology 16 2342
[13] Seo H W, Bae S Y, Park J H, Yang H, Park K S and Kim S 2002 J. Chem. Phys. 116 9492
[14] Chen C C, Yeh C C, Chen C H, Yu M Y, Liu H L, Wu J J, Chen K H, Chen L C, Peng J Y and Chen Y F 2001 J Am. Chem. Soc. 123 2791
[15] Azuhata T, Sota T, Suzuki K and Nakamura S 1995 J. Phys.: Condens. Matter. 7 L129
[16] Siegle H, Kaczmarczyk G, Filippidis L, Litvinchuk A P, Hoffmann A and Thomsen C, 1997 Phys. Rev. B 55 7000
[17] Davydov V Y, Kitaev Y E, Goncharuk I N, Smirnov A N, Graul J, Semchinova O, Uffmann D, Smirnov M B, Mirgorodsky A P and Evarestov R A 1998 Phys. Rev. B 58 12899
[18] Richter H, Wang Z P and Ley L 1981 Solid State Commun. 39 625
[19] Kanata T, Murai H and Kubota K, 1987 J. Appl. Phys. 61 969
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