摘要Different from usual glancing-angle deposition where low surface diffusion is necessary to form nanorods, strong surface diffusion mediated glancing-angle deposition is exemplified by growing tin nanorod films on both silicon and glass substrates simultaneously via thermal evaporation. During growth, the nanorods were simultaneously baked by the high-temperature evaporator, and therefore re-crystallized into single crystals in consequence of strong surface diffusion. The monocrystalline tin nanorods have a preferred orientation perpendicular to the substrate surface, which is quite different from the usual uniformly oblique nanorods without recrystallization.
Abstract:Different from usual glancing-angle deposition where low surface diffusion is necessary to form nanorods, strong surface diffusion mediated glancing-angle deposition is exemplified by growing tin nanorod films on both silicon and glass substrates simultaneously via thermal evaporation. During growth, the nanorods were simultaneously baked by the high-temperature evaporator, and therefore re-crystallized into single crystals in consequence of strong surface diffusion. The monocrystalline tin nanorods have a preferred orientation perpendicular to the substrate surface, which is quite different from the usual uniformly oblique nanorods without recrystallization.
WANG Huan-Hua;SHI Yi-Jian;William CHU;Yigal BLUM. Strong Surface Diffusion Mediated Glancing-Angle Deposition: Growth, Recrystallization and Reorientation of Tin Nanorods[J]. 中国物理快报, 2008, 25(1): 234-237.
WANG Huan-Hua, SHI Yi-Jian, William CHU, Yigal BLUM. Strong Surface Diffusion Mediated Glancing-Angle Deposition: Growth, Recrystallization and Reorientation of Tin Nanorods. Chin. Phys. Lett., 2008, 25(1): 234-237.
[1] Peng X and Chen A 2005 Appl. Phys. A: Mat. Sci. Proc. 80 473 [2] Kayes B M, Atwater HA and Lewis N S 2005 J. Appl.Phys. 97 14302 [3] Robbie K and Brett M J 1997 J. Vac. Sci. Technol. A 15 1460 [4] Zhao Y P et al %, Ye D X, Wang P I, Wang G C and Lu T M2002 Intl. J. Nanosci. 1 87 [5] Wang H H and Zhao Y P 2006 J. Vac. Sci. Techol. B 24 1230 [6] Harris K D, Vick D, Smy T and Brett M J 2002 J. Vac. Sci.Technol. A 20 2062 [7] Zhao Y Pet al %, Ye D X, Wang G C and Lu T M2002 Nano Lett. 2 351 [8] Schubert E et al %, Fahlteich J, Rauschenbach B, Schubert M, Lorenz%M, Grundmann M and Wagner G2006 J. Appl. Phys. 100 016107 [9] Suzuki M et al %, Ito T and Taga Y2001 Appl. Phys. Lett. 78 3968 [10] Takeda Y et al 2006 Conference Record of the 2006IEEE 4th World Conference on Photovoltaic Energy Conversion 1/2 75 [11] Kolmakov A et al %, Zhang Y and Moskvits M2003 Nano Lett. 3 1125