摘要We grow InN epilayers on different interlayers by metal organic vapour phase epitaxy (MOVPE) method, and investigate the effect of interlayer on the properties and growth mode of InN films. Three InN samples were deposited on nitrided sapphire, low-temperature InN (LT-InN) and high-temperature GaN (HT-GaN), respectively. The InN layer grown directly on nitrided sapphire owns the narrowest x-ray diffraction rocking curve (XRC) width of 300 arcsec among the three samples, and demonstrates a two-dimensional (2D) step-flow-like lateral growth mode, which is much different from the three-dimensional (3D) pillar-like growth mode of LT-InN and HT-GaN buffered samples. It seems that mismatch tensile strain is helpful for the lateral epitaxy of InN film, whereas compressive strain promotes the vertical growth of InN films.
Abstract：We grow InN epilayers on different interlayers by metal organic vapour phase epitaxy (MOVPE) method, and investigate the effect of interlayer on the properties and growth mode of InN films. Three InN samples were deposited on nitrided sapphire, low-temperature InN (LT-InN) and high-temperature GaN (HT-GaN), respectively. The InN layer grown directly on nitrided sapphire owns the narrowest x-ray diffraction rocking curve (XRC) width of 300 arcsec among the three samples, and demonstrates a two-dimensional (2D) step-flow-like lateral growth mode, which is much different from the three-dimensional (3D) pillar-like growth mode of LT-InN and HT-GaN buffered samples. It seems that mismatch tensile strain is helpful for the lateral epitaxy of InN film, whereas compressive strain promotes the vertical growth of InN films.
ZHANG Ri-Qing;LIU Xiang-Lin;KANG Ting-Ting;HU Wei-Guo;YANG Shao-Yan;JIAO Chun-Mei;ZHU Qing-Sheng. Influence of Different Interlayers on Growth Mode and Properties of InN by MOVPE[J]. 中国物理快报, 2008, 25(1): 238-241.
ZHANG Ri-Qing, LIU Xiang-Lin, KANG Ting-Ting, HU Wei-Guo, YANG Shao-Yan, JIAO Chun-Mei, ZHU Qing-Sheng. Influence of Different Interlayers on Growth Mode and Properties of InN by MOVPE. Chin. Phys. Lett., 2008, 25(1): 238-241.
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2008, Vol. 25 
