Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE
HU Qiang1, WEI Tong-Bo2, DUAN Rui-Fei2, YANG Jian-Kun2, HUO Zi-Qiang2, LU Tie-Cheng1, ZENG Yi-Ping2
1Department of Physics and Key Laboratory for Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 6100642Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE
HU Qiang1, WEI Tong-Bo2, DUAN Rui-Fei2, YANG Jian-Kun2, HUO Zi-Qiang2, LU Tie-Cheng1, ZENG Yi-Ping2
1Department of Physics and Key Laboratory for Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 6100642Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
摘要Thick GaN films of high quality are directly grown on wet-etching patterned sapphire in a vertical hydride vapour phase epitaxy reactor. The optical and structural properties of GaN films are studied using scanning electronic microscopy and cathodoluminescence. Test results show that initial growth of hydride vapour phase epitaxy GaN occurs not only on the mesas but also on the two asymmetric sidewalls of the V-shaped grooves without selectivity. After the two-step coalescence near the interface, the GaN films near the surface keep on growing along the direction perpendicular to the long sidewall. Based on Raman results, GaN of the coalescence region in the grooves has the maximum residual stress and poor crystalline quality over the whole GaN film, and the coalescence process can release the stress. Therefore, stress-free thick GaN films are prepared with smooth and crack-free surfaces by this particular growth mode on wet-etching patterned sapphire substrates.
Abstract：Thick GaN films of high quality are directly grown on wet-etching patterned sapphire in a vertical hydride vapour phase epitaxy reactor. The optical and structural properties of GaN films are studied using scanning electronic microscopy and cathodoluminescence. Test results show that initial growth of hydride vapour phase epitaxy GaN occurs not only on the mesas but also on the two asymmetric sidewalls of the V-shaped grooves without selectivity. After the two-step coalescence near the interface, the GaN films near the surface keep on growing along the direction perpendicular to the long sidewall. Based on Raman results, GaN of the coalescence region in the grooves has the maximum residual stress and poor crystalline quality over the whole GaN film, and the coalescence process can release the stress. Therefore, stress-free thick GaN films are prepared with smooth and crack-free surfaces by this particular growth mode on wet-etching patterned sapphire substrates.
HU Qiang;WEI Tong-Bo;DUAN Rui-Fei;YANG Jian-Kun;HUO Zi-Qiang;LU Tie-Cheng;ZENG Yi-Ping. Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE[J]. 中国物理快报, 2009, 26(9): 96801-096801.
HU Qiang, WEI Tong-Bo, DUAN Rui-Fei, YANG Jian-Kun, HUO Zi-Qiang, LU Tie-Cheng, ZENG Yi-Ping. Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE. Chin. Phys. Lett., 2009, 26(9): 96801-096801.
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2009, Vol. 26 
