Current Density-Dependent Thermal Stability of ZnSe Nanowire in M-S-M Nanostructure
TAN Yu1,2 , WANG Yan-Guo2**
1 Science College, Hunan Agricultural University, Changsha 4101282 Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190
Abstract :To enhance the thermal stability of metal-semiconductor nanowire(NW)-metal (M-S-M) nanostructure under high electrical and thermal stress conditions, current-induced failure of ZnSe NWs in the M-S-M nanostructure is studied by in situ transmission electron microscopy. When the single NW is replaced by a bundle of NWs, the large current density flowing through the single NW protruding out of the bundle of NWs is responsible for the electrical breakdown of NWs. In this case, the failure mechanism of the NW changes from the bias polarity-dependent mode to the current density-dependent mode. Consequently, a decrease of current density at the reversely biased metal-semiconductor (M-S) nanocontacts can significantly improve the thermal stability of ZnSe NWs in the M-S-M nanostructure and can enhance the performance of the semiconductor NW-based nanoelectronics.
出版日期: 2015-01-12
:
79.70.+q
(Field emission, ionization, evaporation, and desorption)
68.37.Hk
(Scanning electron microscopy (SEM) (including EBIC))
81.07.De
(Nanotubes)
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