中国物理快报  2008, Vol. 25 Issue (7): 2657-2660    
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Enhancement of Field Emission Properties in La-Doped ZnO Films Prepared by Magnetron Sputtering
LI Jun1, WANG Ru-Zhi1,2, LAN Wei1,3, ZHANG Xing-Wang2, DUAN Zhi-Qiang1, WANG Bo1, YAN Hui1
1Laboratory of Thin Film Materials, College of Materials Science and Engineering, Beijing University of Technology, Beijing 1001242Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 1000833Department of Physics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000
Enhancement of Field Emission Properties in La-Doped ZnO Films Prepared by Magnetron Sputtering
LI Jun1, WANG Ru-Zhi1,2, LAN Wei1,3, ZHANG Xing-Wang2, DUAN Zhi-Qiang1, WANG Bo1, YAN Hui1
1Laboratory of Thin Film Materials, College of Materials Science and Engineering, Beijing University of Technology, Beijing 1001242Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 1000833Department of Physics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000